Motorola Corporation

Eastman-kodak Company

Mark S Swenson

Clifford I Drowley

Jennifer J Patterson

Shrinath Ramaswami

Robert Michael Guidash

Sudhir Kumar Madan

Stephen S Poon

Jeffrey L Klein

An electronic component having an image sensing device ( ) and a method for improving pixel charge transfer in the image sensing device ( ). The image sensing device ( ) has a transfer gate ( ) between a source region ( ) and an image sensing region. The image sensing region is formed to have a wider device width proximate to the transfer gate ( ) than at a point distal from the transfer gate ( ).

Electronic component and method for improving pixel charge transfer in the electronic component

An image sensor (,) has an image sensing element that includes an N-type conducting region (,) and a P-type pinned layer (,). The two regions form two P-N junctions at different depths that increase the efficiency of charge carrier collection at different frequencies of light. The conducting region (,) is formed by an angle implant that ensures that a portion of the conducting region (,) can function as a source of a MOS transistor (,).

Method of making a semiconductor image sensor

An image sensor (10) has an image sensing element that includes an N-type conducting region (26) and a P-type pinned layer (37). The two regions form two P-N junctions at different depths that increase the efficiency of charge carrier collection at different frequencies of light. The conducting region (26) is formed by an angle implant that ensures that a portion of the conducting region (26) can function as a source of an MOS transistor (32).

Method of forming a semiconductor image sensor and structure

Semiconductor image sensor

A semiconductor process is provided for the formation of a very low resistance contact. After a straight wall contact is formed conventionally above a silicon substrate, a blanket metal barrier layer is deposited. A plurality of planar polysilicon layers are deposited above the metal barrier layer. The polysilicon layers have varying doping levels and are etched away. A byproduct gas of the etch reaction is monitored and the transition between polysilicon layers can be accurately noted. In this way, a layer of doped polysilicon is left above the metal barrier in the contact region. Metal may then be patterned over the entire structure to provide a low resistance reliable contact.

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Higley, AZ, United States of America

Mark S Swenson