Triquint Technology Holding Co.

Lucent Technologies Inc.

Agere Systems Optoelectronics Guardian Corp.

Mark S Hybertsen

Abdallah Ougazzaden

Charles William Lentz

Yuliya Anatolyevna Akulova

Muhammad Ashrafal Alam

Sung-Nee George Chu

Leonard Jan-Peter Ketelsen

Michael Geva

Roosevelt People

Kenneth Gerard Glogovsky

Harald F Hess

Mary L Gray

The present invention provides an optoelectronic device, a method of manufacture thereof, and an optical communication system including the same. The optoelectronic device may include, in one particular embodiment, an active device located over a substrate and a passive device located proximate the active device and over the substrate. The optoelectronic device may further include a doped cladding layer located over the active and passive devices and a barrier layer located over the doped cladding layer and the passive device.

Optoelectronic device having a barrier layer associated therewith and a method of manufacture thereof

A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffuision of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.

Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs

Vertical cavity surface emitting laser array and a process for making same

A process for fabricating a waveguide with a desired tapered profile is disclosed. The waveguide has a first section with a first height and a second section with a second height. The first height is greater than the second height. The waveguide height tapers from the first height to the second height. The waveguide is a compound semiconductor material and is formed using selective area growth. In selective area growth, a dielectric mask is formed on a substrate. The dimensions of the dielectric mask are selected to provide a waveguide with the desired dimensions. The compound semiconductor material is deposited on the substrate using chemical vapor deposition. The dielectric mask affects the rate at which the compound material is deposited in areas of the substrate proximate to the mask. Therefore, the profile of the waveguide formed using the selected mask dimensions is modeled and compared with the desired profile. If modeled profile is not acceptably similar to the desired profile, the dimensions of the mask are modified. The profile of the waveguide formed using the modified mask dimensions is again modeled, and the modeled waveguide profile is compared with the desired waveguide profile. This process is repeated until the modeled profile is sufficiently similar to the desired profile. After the mask dimensions are selected, the mask is formed on the substrate, and the compound semiconductor waveguide is formed on the substrate using selective area growth.

Process for fabricating an optical waveguide

A micro-photoreflectance technique has been developed for performing non-destructive analysis of III-V optoelectronic devices. By using a significantly reduced spot size (for example, 10 micrometers), various compositional features of the device may be analyzed and the Franz-Keldysh oscillations appearing in the micro-photoreflectance wavelength spectra (such as those beyond the barrier/SCL wavelength in an EML structure) may be analyzed to provide information regarding the physical characteristics of the device, such as the electric field and p-i junction placement within an exemplary EML device structure.

Photoreflectance spectral analysis of semiconductor laser structures

Growing community of inventors

West Orange, NJ, United States of America

Mark S Hybertsen