International Business Machines Corporation

Globalfoundries Inc.

Mark S Chace

Krishna Gandhi Sachdev

Qin Yuan

Janine L Protzman

David Lewis Gardell

Charles Leon Arvin

Jeffrey Donald Gelorme

Wayne Martin Moreau

Christos Dimitrios Dimitrakopoulos

Sushumna Iruvanti

David Robert Medeiros

Ranee W Kwong

Martin Glodde

Harbans S Sachdev

Charles L Reynolds

Michael Berger

Margaret C Lawson

Jiali Wu

Jun Liu

Normand Cote

George J Lawson

Victoria L Calero Diaz Del Castillo

Nitin Jadhav

Yvonne Morris

John E Darney

Alfred O Passano, Jr

Harbans Singh Sachdev, Legal Representative

G John Lawson

Tuknekah M Noble

Timothy J MacMahon

Randall J Bertrand

Mani R Gupta

A formulation comprising an esterified polyamide resin with a photosensitive linkage, a polymerizable crosslinker, and an organic species is provided. The organic species is selected such that (a) when exposed to UV radiation, it copolymerizes with the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin forming the crosslinking network, (b) during thermal cure the copolymer thus formed drops from polyimide backbones, and (c) wherein the thermal degradation temperature of the copolymer thus formed is lower than the thermal degradation temperature of the homopolymer formed from the polymerizable crosslinker and the thermal degradation temperature of the copolymer formed from the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin. The formulation is useful in forming a semiconductor passivation layer and facilitates more complete removal of crosslinker using less stringent conditions.

Additions of organic species to facilitate crosslinker removal during PSPI cure

A tin-based solder melt or aqueous tin plating bath composition comprising a source of tin and a stabilizing additive of chemical structure: wherein R, R, R, R, R, R, R, R, R, and Rare independently selected from hydrogen atom, hydrocarbon groups R having at least one and up to twelve carbon atoms, groups OR' wherein R&#x2032; is selected from hydrogen atom and hydrocarbon groups R, and halogen atoms, and wherein any two, three, or four of R, R, R, R, and Ror any two, three, or four of R, R, R, R, and Rare optionally interconnected to form a fused ring system; Rand Rare independently selected from hydrogen atom and hydrocarbon groups R; and r is either 0 or 1. Methods for coating and/or bonding metal substrates by use of the above-described solder compositions are also described.

Tin-based solder composition with low void characteristic

A method of testing the cleanability of polymerized sublimate outgassed from a lithography material during a thermal heating process including; placing a wafer on a wafer hotplate inside a chamber with the wafer being covered by a lithography material; placing a target, having a starting composition, above the wafer in the chamber; heating the wafer using the wafer hotplate in an attempt to outgas a sublimate, where the sublimate condenses on the target; forming a polymerized sublimate on the target; and applying organic solvents to the target to determine the cleanability of the polymerized sublimate.

Cleanability assessment of sublimate from lithography materials

Methods for forming a dense dielectric layer over the surface of an opening in a porous inter-layer dielectric having an ultra-low dielectric constant are disclosed. The disclosure provides methods for exposing the sidewall surface and the bottom surface of the opening to a plurality of substantially parallel ultra-violet (UV) radiation rays to form a dense dielectric layer having a substantially uniform thickness over both the sidewall surface and the bottom surface.

Methods for forming dense dielectric layer over porous dielectrics

Liquid compositions containing a specific hindered phenol or a hindered phenol in combination with an aromatic phosphite are provided which are used as a thermal interface between a heatsink and a chip during a test procedure for electronic components which compositions enhance the thermal conductivity between the heatsink and the chip, are easily removed from the heatsink and the chip after the test procedure without any deleterious residue and which allow the use of high temperatures for extended periods during the test procedure without any significant degradation of the composition. A method for using the compositions in electronic component test procedures such as burn-in procedures is also provided.

Enhanced thermo-oxidative stability thermal interface compositions and use thereof in microelectronics assembly

A liquid thermal interface (LTI) including a mixture of a linearly structured polymer doped with crosslinked networks and related method are presented. The LTI exhibits reduced liquid polymer macromolecule mobility, and thus increased surface tension. An embodiment of the method includes mixing a crosslinker with a linearly structured polymer to form a mixture, wherein the crosslinker includes a base agent including a vinyl-terminated or branched polydimethylsiloxane, and a curing agent including a hydrogen-terminated polydimethylsiloxane; and curing the mixture. The crosslinker functions as cages to block linear or branched linear macromolecules and prevents them from sliding into each other, thus increasing surface tension of the resulting LTI.

Liquid thermal interface having mixture of linearly structured polymer doped crosslinked networks and related method

Real-time analysis of output volatiles upon UV exposure is achieved using a laboratory scale apparatus. The methods and apparatus use external or internal radiation sources, especially broad band external UV radiation. The apparatus and methods of the invention are especially useful in the analysis and screening of photoresist materials. The apparatus preferably uses FTIR or MS analysis.

Apparatus for photo exposure of materials with subsequent capturing of volatiles for analysis

The present invention discloses chip (die) bond adhesive formulations preferably comprising a siloxane containing epoxide preferably a diglycidyl ether derivative, an anhydride curing additive which is soluble in the epoxide without the use of a solvent, and, optionally comprising, and oligomeric/polymeric co-additive of the type poly(alkylacrylate or -methacrylate), in conjunction with thermal and electrically conductive fillers and conventional co-catalysts used for curing epoxy systems to provide reworkable epoxy adhesives. Also disclosed are adhesive formulations comprising a siloxane containing epoxide and a hydroxybenzophenone curing additive which is soluble in the epoxide without the use of a solvent. The chips can be bonded to the substrate by conventional heating and curing techniques. With epoxy adhesive compositions comprising polyacrylate additives, the die bonded assembly can be reworked by heating the assembly to about 180.degree. C. to 250.degree. C. removing the chip, and rebonding a new chip on the same surface without any effect on the shear strength for die bonded on to gold, copper, silver or a ceramic die pad. Die shear strength using the adhesives remains unchanged when exposed to thermal shock involving -65.degree. C. to +150.degree. C. excursions, and HAST test at 130.degree. C. /85 percent RH (Relative Humidity) or 85.degree. C./85% RH. A method is also provided for using the adhesives to make electronic component assemblies.

Solvent-free epoxy based adhesives for semiconductor chip attachment and

An interface linking a mass spectrometer (MS) to a thermogravitational analyzer (TGA) for adjusting the concentration of volatiles entering the MS. The interface is preferably a capillary column provided with a dilution chamber having a inlet for gas insertion, with one end of the chamber connected to the TGA and the other to the capillary column having its other end directly attached to the MS. In a second embodiment, the interface bypasses the dilution chamber, and is made of a glass tubing protected by a stainless steel tubing, in turn surrounded by a temperature programmable sheath heater.

Interface for linking an atmospheric pressure thermogravimetric analyzer

The use of silicon-containing polyimide as an oxygen etch barrier in a metal lift-off process and as an oxygen etch stop in the fabrication of multi-layer metal structures is described. In practice, a lift-off layer is applied on a substrate, followed by a layer of silicon-containing polyimide and a layer of photoresist. The photoresist is lithographically patterned, and the developed image is transferred into the silicon-containing polyimide layer with a reactive ion etch using a CF.sub.4 /O.sub.2 gas mixture. The pattern is transferred to the lift-off layer in a reactive ion etch process using oxygen. Subsequent blanket metal evaporation followed by removal of the lift-off stencil results in the desired metal pattern on the substrate. In an alternate embodiment, the silicon-containing polyimide can be doped with a photoactive compound reducing the need for a separate photoresist imaging layer on the top.

Silicon-containing polyimides as oxygen etch stop and dual dielectric

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Poughkeepsie, NY, United States of America

Mark S Chace