Thermatrix, Inc.

Advanced Technology Materials, Inc.

Atmi Ecosys Corporation

Applied Materials, Inc.

Hewlett-Packard Corporation

Mark R Holst

Richard J Martin

John D Stilger

Jose I Arno

Scott Lane

Glenn M Tom

Kent H Carpenter

Prakash V Arya

Rebecca Faller

Ray Dubois

Bradley L Edgar

John D Young

Samson C Yee

Joseph D Sweeney

Michael P Barkdoll

Michael W Hayes

W Karl Olander

John T Schofield

Ann C Heywood

Jason Deseve

Jeff Lorelli

Sam Yee

Patrick Balliew

An effluent gas stream treatment system for treatment of gaseous effluents such as waste gases from semiconductor manufacturing operations. The effluent gas stream treatment system comprises a pre-oxidation treatment unit, which may for example comprise a scrubber, an oxidation unit such an electrothermal oxidizer, and a post-oxidation treatment unit, such as a wet or dry scrubber. The effluent gas stream treatment system of the invention may utilize an integrated oxidizer, quench and wet scrubber assembly, for abatement of hazardous or otherwise undesired components from the effluent gas stream. Gas or liquid shrouding of gas streams in the treatment system may be provided by high efficiency inlet structures.

Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases

Apparatus and method for abatement of effluent from multi-component metal oxides deposited by CVD processes using metal source reagent liquid solutions which comprise at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex and a suitable solvent medium for that metal coordination complex e.g., a metalorganic chemical vapor deposition (MOCVD) process for forming barium strontium titanate (BST) thin films on substrates. The effluent is sorptively treated to remove precursor species and MOCVD process by-products from the effluent. An endpoint detector such as a quartz microbalance detector may be employed to detect incipient breakthrough conditions in the sorptive treatment unit.

Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions

A system for abating undesired component(s) from a gas stream containing same, such as halocompounds, acid gases, silanes, ammonia, etc., by scrubbing of the effluent gas stream with an aqueous scrubbing medium. Halocompounds, such as fluorine, fluorides, perfluorocarbons, and chlorofluorocarbons, may be scrubbed in the presence of a reducing agent, e.g., sodium thiosulfate, ammonium hydroxide, or potassium iodide. In one embodiment, the scrubbing system includes a first acid gas scrubbing unit operated in cocurrent gas/liquid flow, and a second &ldquo;polishing&rdquo; unit operated in countercurrent gas/liquid flow, to achieve high removal efficiency with low consumption of water. The scrubbing system may utilize removable insert beds of packing material, packaged in a foraminous containment structure. The abatement system of the invention has particular utility in the treatment of semiconductor manufacturing process effluents.

Method for point-of-use treatment of effluent gas streams

A method and apparatus for abatement of effluent from a CVD process using a source reagent having a metal organic loosely bound to a organic or organometallic molecule such that upon exposure to heat such bond is readily cleavable, e.g., copper deposition process involving the formation of films on a substrate by metalorganic chemical vapor deposition (CVD) utilizing a precursor composition for such film formation. The abatement process in specific embodiments facilitates high efficiency abatement of effluents from copper deposition processes utilizing Cu(hfac)TMVS as a copper source reagent.

Abatement of effluents from chemical vapor deposition processes using organometallic source reagents

An ion implantation process system, including an ion implanter apparatus for carrying out an ion implantation process. A supply of source gas for the ion implantation process is arranged to flow to the ion implanter apparatus, which discharges an effluent gas stream including ionization products of the source gas during the ion implantation process. The system includes an effluent abatement apparatus for removing hazardous effluent species from the effluent gas stream. The source gas may be furnished from a low pressure gas source in which the source gas is sorptively retained in a vessel on a sorbent medium having affinity for the source gas, and desorbed for dispensing to the process system. A novel scrubbing composition may be employed for effluent treatment, and the scrubbing composition breakthrough of scrubbable component may be monitored with a device such as a quartz microbalance monitor.

Integrated ion implant scrubber system

A method and apparatus for abatement of effluent from a CVD process using a source reagent having a metal organic loosely bound to a organic or organomettalic molecule such that upon exposure to heat such bond is readily cleavable, e.g., copper deposition process involving the formation of films on a substrate by metalorganic chemical vapor deposition (CVD) utilizing a precursor composition for such film formation. The abatement process in specific embodiments facilitates high efficiency abatement of effluents from copper deposition processes utilizing Cu(hfac)TMVS as a copper source reagent.

An effluent abatement system for abating hydride species in a hydride-containing effluent, arranged for carrying out the steps of: (1) contacting the hydride-containing effluent with a dry scrubber material comprising a metal oxide that is reactive with the hydride species to remove the hydride species from the effluent, until the capacity of the dry scrubber material for hydride species is at least partially exhausted; and (2) contacting the at least partially exhausted capacity dry scrubber material with an oxidant to at least partially regain the capacity of the dry scrubber material for the hydride species. The system of the invention has particular utility in the treatment of effluent from III-V compound semiconductor manufacturing operations.

In-situ air oxidation treatment of MOCVD process effluent

Method of abating of effluents from chemical vapor deposition processes using organometallic source reagents

A method and system for reducing pollutant concentration within an internal combustion engine exhaust stream is disclosed. Soot and products of incomplete combustion in the engine exhaust stream are destroyed by oxidizing them in a flameless thermal oxidizer that contains a matrix of heat-resistant media. Methods and systems for increasing particle residence time within the thermal oxidizer are also disclosed. These techniques include employing electrostatic precipitation, centrifugal force, and particle impaction sections. A method and system for reducing oxides of nitrogen (NOx) emissions is also disclosed. Low NOx concentration may be obtained by adding a SCR system after a thermal oxidizer, by tuning the engine to produce low NOx/high soot and destroying the soot in a thermal oxidizer, and by injecting a reductant into the thermal oxidizer. The flameless thermal oxidizer may be located between the engine and a turbo-charger to enhance thermal efficiency and to reduce turbo-charger wear. The thermal oxidizer comprises longitudinal and radial flow systems, which each may include a reaction wave of the following shapes: planar, cylindrical, Bunsen, Burke-Schumann, and an inverted V. An engineered matrix is disclosed to manipulate the shape of the reaction zone.

Method of reducing internal combustion engine emissions, and system for same

An effluent gas stream treatment system for treatment of gaseous effluents such as waste gases from semiconductor manufacturing operations. The effluent gas stream treatment system comprises an oxidation unit to which an oxygen-containing gas such as ozone may be added, with input of energy (e.g., thermal, radio frequency, electrical, microwave, etc.), to effect oxidation of oxidizable species in the effluent, such as halocompounds (e.g., chlorofluorocarbons, perfluorocarbons), CO, NF,, nitrogen oxides, and sulfur oxides). The effluent gas stream treatment system may include a wet scrubber associated with the oxygen-containing gas source, so that the gas stream is contacted with the oxygen-containing gas during the wet scrubbing operation, to enhance removal of oxidizable species in the gas stream during treatment.

A matrix bed is disclosed in which a non-planar reaction wave front is formed during operation. This is accomplished by heating the matrix bed, containing heat-resistant material, until at least a reaction portion of the matrix bed is above the temperature required for a plurality of reactant gas streams to react. Next, the reactant gas streams are directed through the matrix bed in a manner so as to form at least a Bunsen, Burke-Schumann, inverted-V, or some other type of non-planar reaction wave front at the portion of the matrix bed that is heated above the reactant gas streams reaction temperature. At the non-planar reaction wave front, the reactant gas streams react to produce a reaction product gas stream that is then exhausted from the matrix bed.

Growing community of inventors

Concord, CA, United States of America

Mark R Holst