Seh America, Inc.

Mark R Boydston

Gerald R Dietze

Oleg V Kononchuk

Dena C Mitchell

Dominic A Hartmann

A method of growing epitaxial semiconductor layers with reduced crystallographic defects. The method includes etching the wafer surface and then growing an initial portion of the epitaxial layer under conditions of relatively high temperature and low source gas flow to heal defects in or on the surface of the substrate. Subsequently, the remainder of the epitaxial layer is grown under high growth rate conditions resulting from high source gas flow. The initial portion of the epitaxial layer acts as a low-defect seed layer by preventing defects in the surface of the substrate from propagating into the remainder of the epitaxial layer. However, the relatively high source gas flow permits the remainder epitaxial layer to be grown at a faster rate than the initial portion of the epitaxial layer.

Growth of epitaxial semiconductor material with improved crystallographic properties

A method of growing epitaxial semiconductor layers with reduced crystallographic defects. The method includes growing a first epitaxial semiconductor layer on a semiconductor substrate under conditions of relatively high temperature and low source gas flow to heal defects in or on the surface of the substrate. Subsequently, a second epitaxial semiconductor layer is grown on the first layer under conditions of relatively low temperature and high source gas flow. The first epi layer acts as a low-defect seed layer by preventing defects in the surface of the substrate from propagating into the second epi layer. Optionally, a hydrogen chloride etch may be employed during a portion of the first epi layer growth to increase the efficacy of the first layer.

A reactor system with an associated wafer support device is provided for use in the growth of an epitaxial layer of semiconductor material on a semiconductor wafer. The reactor system includes a reaction chamber including an inlet and an outlet configured to flow a source gas through the reaction chamber. The reaction system also includes a wafer support mounted at least partially within the reaction chamber, and a semiconductor wafer supported adjacent an outer edge by the wafer support. The wafer support device typically includes a hub and an arm extending outwardly from the hub. The wafer support device also typically includes a contact member coupled to the arm. In some embodiments a portion of the contact member extending downward relative to the back side of the wafer. The downwardly extending portion is configured to contact and support the wafer during epitaxial growth of semiconductor material onto the wafer.

Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth

A method for preparing an epitaxial silicon wafer in a reactor is provided. The method comprises the steps of depositing an epitaxial layer on a surface of a silicon wafer contained in the reactor at an elevated temperature; purging the reactor with hydrogen after the epitaxial deposition; and cooling the reactor to an appropriate temperature which allows hydrogen passivation of the surface of the epitaxial layer. This prevents the formation of an oxide layer on the surface of the epitaxial layer for a sufficient amount of time to allow an accurate measurement of a carrier density profile of the epitaxial silicon wafer.

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Vancouver, WA, United States of America

Mark R Boydston