Ncr Corporation

Hyundai Electronics America, Inc.

At&t Global Information Solutions Company

Symbios, Inc.

Mark Q Scaggs

Harold S Crafts

William W McKinley

A semiconductor structure comprising a polysilicon pad, a metal pad separated from the polysilicon pad by an insulator, and a metal via connecting the pads. A fuse is formed at the intersection of the polysilicon pad and via.

Semiconductor fuse structure

A high frequency integrated circuit channel capacitor structure comprised of interdigitated field effect transistor gate electrodes and source/drain regions of minimum dimension and respective common connection. The multiplicity of parallel connected capacitive regions between the polysilicon gate electrode and a channel region in the substrate provide precisely controlled capacitors with exceptionally low resistance. Metallization contacts to the gate polysilicon and source/drain regions at each interleaved pattern, together with minimum channel length dimensions, minimizes the capacitive resistance. A CMOS configuration is also feasible.

Growing community of inventors

Parker, CO, United States of America

Mark Q Scaggs