General Electric Company

Momentive Performance Materials Gmbh

Mark Phillip D'Evelyn

Jesse Berkley Tucker

An-Ping Zhang

Nicole Andrea Evers

Jeffrey Bernard Fedison

There is provided an electronic device. The electronic device includes at least one epitaxial semiconductor layer disposed on a single crystal substrate comprised of gallium nitride having a dislocation density less than about 10per cm. A method of forming an electronic device is also provided. The method includes providing a single crystal substrate comprised of gallium nitride having a dislocation density less than about 10per cm, and homoepitaxially forming at least one semiconductor layer on the substrate.

Homoepitaxial gallium-nitride-based electronic devices and method for producing same

A method of functionalizing a diamond crystal comprises hydrogenating a diamond crystal, chlorinating the hydrogenated diamond crystal; and exposing the chlorinated diamond crystal to a metal precursor. The exposing step deposits a layer of metal on surfaces of the diamond crystals. The diamond crystal formed by the method possesses surface sites that form a strong bond with the layer of metal to prevent separation thereat, and the layer of metal form strong bonds to a matrix material, for example one of a vitreous and metallic matrix. The functionalized diamond crystal can be used in abrasive products.

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Niskayuna, NY, United States of America

Mark Phillip D'Evelyn