Soraa, Inc.

Slt Technologies, Inc.

General Electric Company

Momentive Performance Materials Gmbh

Other

Diamond Innovations. Inc.

Gelcore, LLC

Elmhurst Research, Inc.

Mark Philip D'Evelyn

Dong-Sil Park

Derrick S Kamber

Kristi Jean Narang

Michael Ragan Krames

Huicong Hong

Steven Francis LeBoeuf

James W Raring

Dirk Ehrentraut

Eric M Hall

Wenkan Jiang

Peter Micah Sandvik

Larry Burton Rowland

Stephen Daley Arthur

Rajat Sharma

Thomas M Katona

Douglas Wayne Pocius

James Stephen Speck

Suresh Shankarappa Vagarali

Bradley C Downey

Aurelien J F David

Robert Arthur Giddings

Steven Alfred Tysoe

John Thomas Leman

Drew W Cardwell

Jonathan D Cook

Rajeev Tirumala Pakalapati

John William Lucek

Larry Qiang Zeng

Nicole Andrea Evers

Xian-An Cao

Fred Sharifi

Thomas R Anthony

Arpan Chakraborty

Daniel F Feezell

Steven William Webb

Christiane Poblenz

Xian-an Cao

Robert Vincent Leonelli, Jr

Myles Standish Peterson, Ii

Lionel M Levinson

Mathew C Schmidt

Thomas Francis McNulty

Kanin Chu

Joell Randolph Hibshman, Ii

Anping Zhang

Michael H Zimmerman

Subhrajit Dey

Abasifreke Udo Ebong

William Houck

David Charles Pender

Chung S Kim

Aaron W Saak

Alex Alexander

Joel Rice Dysart

Robert J Wojnarowski

Venkat Subramaniam Venkataramani

Charles Dominic Iacovangelo

Kanakasabapathi Subramanian

Samhita Dasgupta

Akinori Koukitu

Vinayak Tilak

Edward Brittain Stokes

Yoshinao Kumagai

Clifford L Spiro

Loucas Tsakalakos

Jeffrey Bernard Fortin

Michael Joseph Cich

Kenneth Roger Conway

Bruce Gordon Norman

Hisashi Murakami

Charles Adrian Becker

Christopher Long

Ashok K Khare

Bruce J Badding

William D Houck, Ii

Christophe A Hurni

An-Ping Zhang

Azar Alizadeh

Roman Shuba

Suryaprakash Ganti

Nikhil Taskar

Victor Lienkong Lou

Peter S Allison

Yavuz Kadioglu

Zheng Chen

Yue Meng

Joseph A Kapp

Stanton E Weaver

Pakalapati Tirumala Rajeev

Nathan Young

James Michael McHale, Jr

Pradeep Sharma

Aurelein J F David

John W Nink, Jr

James Wenger

Mike Krames

John C Lawrenson

Joseph Alexander Kapp

Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.

Reusable nitride wafer, method of making, and use thereof

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

Large area group III nitride crystals and substrates, methods of making, and methods of use

Group III nitride substrate, method of making, and method of use

High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.

High quality group-III metal nitride seed crystal and method of making

According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

Methods for coupling of optical fibers to a power photodiode

Power photodiode structures and devices

A method for forming a laterally-grown group III metal nitride crystal includes providing a substrate, the substrate including one of sapphire, silicon carbide, gallium arsenide, silicon, germanium, a silicon-germanium alloy, MgAlOspinel, ZnO, ZrB, BP, InP, AlON, ScAlMgO, YFeZnO, MgO, FeNiO, LiGaO, NaMoO, NaWO, InCdO, lithium aluminate (LiAlO), LiGaO, CaLa(PO)O, gallium nitride, or aluminum nitride (AlN), forming a pattern on the substrate, the pattern comprising growth centers having a minimum dimension between 1 micrometer and 100 micrometers, and being characterized by at least one pitch dimension between 20 micrometers and 5 millimeters, growing a group III metal nitride from the pattern of growth centers vertically and laterally, and removing the laterally-grown group III metal nitride layer from the substrate. A laterally-grown group III metal nitride layer coalesces, leaving an air gap between the laterally-grown group III metal nitride layer and the substrate or a mask thereupon.

Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate

Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate

Power photodiode structures, methods of making, and methods of use

A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

Method and system for preparing polycrystalline group III metal nitride

A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm, with an absorbance per unit thickness of greater than about 0.01 cm. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3&#xd7;10per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution

Gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) &#x2212;c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5&#xd7;10cm; an impurity concentration of oxygen between about 2&#xd7;10cmand about 1&#xd7;10cm; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and CI greater than about 1&#xd7;10cm; a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cmat wavenumbers of approximately 3175 cm, 3164 cm, and 3150 cm; and wherein, at wavenumbers between about 3200 cmand about 3400 cmand between about 3075 cmand about 3125 cm, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

Oxygen-doped group III metal nitride and method of manufacture

Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules

A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

Power light emitting diode and method with uniform current density operation

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Santa Barbara, CA, United States of America

Mark Philip D'Evelyn