Slt Technologies, Inc.

Mark P D'evelyn

Drew W Cardwell

Dirk Ehrentraut

Wenkan Jiang

Douglas Wayne Pocius

Jonathan D Cook

Paul M Von Dollen

Lisa M Gay

David N Italiano

Keiji Fukutomi

Chiaki Domoto

A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×10cm; an impurity concentration of oxygen between about 2×10cmand about 1×10cm; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×10cm; a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cmat wavenumbers of approximately 3175 cm, 3164 cm, and 3150 cm; and wherein, at wavenumbers between about 3200 cmand about 3400 cmand between about 3075 cmand about 3125 cm, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

Oxygen-doped group III metal nitride and method of manufacture

A method for growth of group III metal nitride crystals includes providing one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process.

Ultrapure mineralizer and improved methods for nitride crystal growth

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for substrates with a controlled oxygen gradient using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

Group III nitride substrate with oxygen gradient, method of making, and method of use

Embodiments of disclosure may provide a method for forming an aluminum-containing nitride ceramic matrix composite, comprising heating a green body, an aluminum-containing composition, ammonia and a mineralizer composition in a sealable container to a temperature between about 400 degrees Celsius and about 800 degrees Celsius and a pressure between about 10 MPa and about 1000 MPa, to form an aluminum-containing nitride ceramic matrix composite characterized by a phosphor-to-aluminum nitride (AlN) ratio, by volume, between about 1% and about 99%, by a porosity between about 1% and about 50%, and by a thermal conductivity between about 1 watt per meter-Kelvin and about 320 watts per meter-Kelvin. The green body comprises a phosphor powder comprising at least one phosphor composition, wherein the phosphor powder particles are characterized by a D50 diameter between about 100 nanometers and about 500 micrometers, and the green body has a porosity between about 10% and about 80%. The aluminum-containing composition has a purity, on a metals basis, between about 90% and about 99.9999%. The fraction of free volume within the sealable container contains between about 10% and about 95% of liquid ammonia prior to heating the green body, the aluminum-containing composition, ammonia and the mineralizer composition in the sealable container.

Aluminum-containing nitride ceramic matrix composite, method of making, and method of use

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

Large area group III nitride crystals and substrates, methods of making, and methods of use

According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

Power photodiode structures and devices

Methods for coupling of optical fibers to a power photodiode

A method for growth of group III metal nitride crystals includes providing a manifold comprising including one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, the metallic surface comprising a composition that does not form a reaction product when exposed to the condensable mineralizer composition, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process that comprises exposing a seed crystal to a temperature of at least about 400 degrees Celsius, and exposing the seed crystal to a mineralizer that is formed from the condensable mineralizer composition transferred from the receiving vessel.

A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001)+c-plane and a (000-1)−c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×10cm, an impurity concentration of oxygen between about 2×10cmand about 1×10cm, an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×10cm, a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cmat wavenumbers of approximately 3175 cm, 3164 cm, and 3150 cm, and wherein, at wavenumbers between about 3200 cmand about 3400 cmand between about 3075 cmand about 3125 cm, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

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Vancouver, WA, United States of America

Mark P D'evelyn