Asm IP Holding B.v.

Mark Olstad

Petri Raisanen

Dong Li

Ward Johnson

Peijun Chen

Jose Alexandro Romero

Eric James Shero

Carl Louis White

Herbert Terhorst

Jereld Lee Winkler

Kyle Fondurulia

Ankit Kimtee

Dinkar Nandwana

Michael Schmotzer

William George Petro

Gnyanesh Trivedi

The present disclosure pertains to embodiments of a showerhead assembly which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The showerhead assembly has a showerhead which has an increased thickness which advantageously decreases reactor chamber size and decreases cycling time. Decreased cycling time can improve throughput and decrease costs.

Showerhead assembly and components

A method of depositing a material film on a substrate within a reaction chamber by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant and purging the reaction chamber with a first main purge. The method also includes: contacting the substrate with a second vapor phase reactant by two or more micro pulsing processes, wherein each micro pulsing process comprises: contacting the substrate with a micro pulse of a second vapor phase reactant; and purging the reaction chamber with a micro purge, wherein each of the micro pulses of the second vapor phase reactant provides a substantially constant concentration of the second vapor phase reactant into the reaction chamber. The method may also include; purging the reaction chamber with a second main purge. Device structures including a material film deposited by the methods of the disclosure are also disclosed.

Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures

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Chandler, AZ, United States of America

Mark Olstad