Adc Telecommunications, Inc.

Mark McElhinney

Paul E Colombo

Scott W Priddy

Kevin J Hubbard

Edward Charles Gage

Li Cai

James M VanHove

In order to reduce the possibility of a laser operating in multiple transverse modes at high power, the laser is provided with laterally asymmetric losses that discriminate against modes higher than the fundamental mode. One approach to doing this is form an asymmetric ridge waveguide in the laser, that allows the light of the higher order modes to leak out of the waveguide.

Semiconductor optical device having asymmetric ridge waveguide and method of making same

An optical communications control station includes an equipment rack and a fiber frame for interfacing between the fiber communications link and the equipment in the rack. Raman pump lasers in the equipment rack produce a Raman pump output that bypasses the fiber frame and is coupled directly into the fiber communications link. The number of connectorized components that the pump light passes through is reduced, thus reducing the possibility of damaging fiber connections by passing the high power Raman pump light through fiber connections. The approach also reduces the possibility of an operator being inadvertently exposed to the high power Raman pump light, thus increasing operator safety.

Raman amplifier with high power distribution bypass

An apparatus and method for batch processing semiconductor lasers producing substantially contamination free laser bar end surfaces for optimal growth of end surface layers are provided. The method includes loading a laser cell comprising a plurality of laser bars and an empty cassette capable of holding a plurality of laser bars into a cleaving chamber and pumping the cleaving chamber down to a desired pressure. Next, a cleaving cycle is performed in which an end laser bar is cleaved off the laser cell. The laser bar is deposited in the cassette, while the laser cell is positioned for a subsequet operation. The cleaving cycle repeats until a plurality of laser bars are cleaved off the laser cell and loaded into the cassette. The cassette is then moved into a deposition chamber where a layer of material is deposited on at least one end surface of all of the laser bars in the cassette.

Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers

A semiconductor laser with improved device characteristics and novel protection against high power output degradation is disclosed. The laser comprises a plurality of layers deposited on a substrate, including an active layer with neighboring cladding layers, so as to define a waveguide, said waveguide having opposing end surfaces. A single crystal mirror layer is formed directly on at least one of the end surfaces, providing improved device characteristics and a longer life time for high power output applications. The mirror layer has sufficient thickness and is made of a material having a refractive index sufficiently different from that of the active layer to substantially modify the reflectivity of the first end surface. In a preferred embodiment, the laser is an AlGaAs laser designed to operate at 980 nm, and the single crystal mirror layer comprises a large band gap material, such as ZnSe, MgS, or BeTe.

Semiconductor lasers having single crystal mirror layers grown directly on facet

An apparatus and method for batch processing semiconductor lasers producing substantially contamination free laser bar end surfaces for optimal growth of end surface layers are provided. The method includes loading a laser cell comprising a plurality of laser bars and an empty cassette capable of holding a plurality of laser bars into a cleaving chamber and pumping the cleaving chamber down to a desired pressure. Next, a cleaving cycle is performed in which an end laser bar is cleaved off the laser cell. The laser bar is deposited in the cassette, while the laser cell is positioned for a subsequent operation. The cleaving cycle repeats until a plurality of laser bars are cleaved off the laser cell and loaded into the cassette. The cassette is then moved into a deposition chamber where a layer of material is deposited on at least one end surface of all of the laser bars in the cassette.

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Vadnais Heights, MN, United States of America

Mark McElhinney