Siemens Aktiengesellschaft

Infineon Technologies Ag

Zf Friedrichshafen Ag

Siemens Energy Global Gmbh & Co. Kg

Innomotics Gmbh

Siemens Mobility Gmbh

Mark-Matthias Bakran

Franz-Josef Niedernostheide

Zheming Li

Daniel Domes

Robert Maier

Viktor Hofmann

Andre Schoen

Hans-Joachim Knaak

Hans-Günter Eckel

Sebastian Semmler

Marco Denk

Andreas März

Anton Mauder

Dominik Ergin

Jan Weigel

Andreas Nagel

Guang Zeng

Eberhard Ulrich Krafft

Dominik Schuster

Andreas Holweck

Fabian Hohmann

Stefan Hans Werner Schönewolf

Jürgen Böhmer

Bernd Laska

Georg Zaiser

Stefan Hain

Martin Neeser

Martin Helsper

Stefan Hans Werner SCHÖNEWOLF

Andre Schön

Andre SCHÖN

Matthias Hofstetter

Jiang Xu

Jurgen Bohmer

Stefan Hans Schonewolf

A submodule for a modular multilevel converter has ten semiconductor switches that can be switched off, four capacitors, six network nodes, and two terminals. The components are mounted such that different voltages are generated between the terminals of the submodule by controlling the semiconductor switches. This arrangement of components substantially improves the behavior of the converter and of the submodule in the event of a fault.

Submodule as a hybrid cell for a modular multilevel converter

A gate driver system includes a gate driver circuit coupled to a gate terminal of a transistor and configured to control a gate voltage to generate an on-current during a plurality of turn-on switching events to turn on the transistor. The gate driver circuit includes a first driver configured to source a first portion of the on-current to the gate terminal to charge a first portion of the gate voltage, and a second driver configured to, during a boost interval, source a second portion of the on-current to the gate terminal to charge a second portion of the gate voltage. A control circuit measures a transistor parameter representative of a reverse recovery current of the transistor for a turn-on switching event during which the transistor is transitioned to an on state and controls the first driver and controls the second driver based on the measured transistor parameter.

Actively tracking switching speed control and regulating switching speed of a power transistor during turn-on

A method of driving a transistor between switching states includes controlling a transition of a gate voltage at a gate terminal of a transistor during each of a plurality of turn-off switching events to turn off the transistor, wherein the transistor is configured to be turned off according to a desaturation time during each of the plurality of turn-off switching events; measuring a transistor parameter indicative of a voltage slew rate of the transistor for a first turn-off switching event during which the transistor is transitioned from an on state to an off state; and regulating a duration of the desaturation time for a next turn-off switching event based on the measured transistor parameter.

Gate control method of MOS-gated power device

A method is provided for driving a half bridge circuit that includes a first transistor and a second transistor. The method includes generating an off-current during a plurality of turn-off switching events to control a gate voltage of the second transistor; measuring a transistor parameter of the second transistor during a first turn-off switching event during which the second transistor is transitioned to an off state, wherein the transistor parameter is indicative of an oscillation at the first transistor during a corresponding turn-on switching event during which the first transistor is transitioned to an on state; and activating a portion of the off-current for the second turn-off switching event, including regulating an interval length of the second portion for the second turn-off switching event based on the measured transistor parameter measured during the first turn-off switching event.

Method for reducing oscillation during turn on of a power transistor by regulating the gate switching speed control of its complementary power transistor

A submodule for a modular multilevel converter has nine semiconductor switches that can be switched off, four capacitors, six network nodes, and two terminals. The components are mounted such that different voltages are generated between the terminals of the submodule by controlling the semiconductor switches. This arrangement of components substantially improves the behavior of the converter and of the submodule in the event of a fault.

Submodule as a parallel serial full bridge for a modular multilevel converter

A gate driver system includes a gate driver circuit coupled to a gate terminal of a transistor and configured to generate an on-current during a plurality of turn-on switching events to turn on the transistor, wherein the gate driver circuit includes a first driver configured to source a first portion of the on-current to the gate terminal to charge a first portion of the gate voltage and a second driver configured to, during a first boost interval, source a second portion of the on-current to the gate terminal to charge a second portion of the gate voltage; a measurement circuit configured to measure a transistor parameter indicative of an oscillation of a load current for a turn-on switching event; and a controller configured to receive the measured transistor parameter and regulate a length of the first boost interval based on the measured transistor parameter.

A method is provided for driving a half bridge circuit that includes a first transistor and a second transistor that are switched in a complementary manner. The method includes generating an off-current during a plurality of turn-off switching events to control a gate voltage of the second transistor; measuring a transistor parameter of the second transistor during a first turn-off switching event during which the second transistor is transitioned to an off state, wherein the transistor parameter is indicative of an oscillation at the first transistor during a corresponding turn-on switching event during which the first transistor is transitioned to an on state; and activating a portion of the off-current for the second turn-off switching event, including regulating an interval length of the second portion for the second turn-off switching event based on the measured transistor parameter measured during the first turn-off switching event.

A method for detecting the aging of a power electronic device that comprises at least one semiconductor component including a step of providing of an excitation signal, which is designed to trigger a flow of an at least approximately semi-sinusoidal excitation current through the semiconductor component in order to introduce a power loss into the semiconductor component, a step of uploading a temperature signal, which represents the temporal course of the temperature of the semiconductor component, and a step of determining of an aging value that represents the aging of the power electronic device by using the temperature signal.

Method and apparatus for detecting ageing of a power electronic apparatus comprising a semiconductor component, and power electronic system

A modular power converter with wide-bandgap semiconductors, in particular SiC semiconductors. The modular power converter has at least two base units. The base units are connected together on the input side, and each base unit has an input circuit on the input side and an output circuit on the output side. The input circuit and the output circuit are each formed by the wide-bandgap semiconductors arranged in a B6-bridge circuit. An intermediate circuit capacitor is connected in parallel with the input circuit and the output circuit forming an intermediate circuit. The input circuits of the base units or a sub-quantity of the base units are arranged in a series circuit. At least one inductor is arranged between each pair of input circuits.

Modular power converter

A switchable longitudinal voltage source has a first feed connection for feeding in a first current, a first output connection for outputting the first current, a second feed connection for feeding in a second current, and a second output connection for outputting the second current. An electrical energy store has a first connection and a second connection coupled to the output connections. The switchable longitudinal voltage source further has a center terminal of a first series circuit which directly forms the first output connection or terminal and a center terminal of a second series circuit which directly forms the second output connection or terminal.

Switchable longitudinal voltage source, direct current transmission system with longitudinal voltage source and method for operating a longitudinal voltage source

In a method for protecting a field-effect transistor, which is operated in a switching mode, against an overload current in a switched-on switching state, an electric drain-source voltage between a drain connection and a source connection of the field-effect transistor is detected. The drain-source voltage is compared with a predefined voltage comparison value, and the field-effect transistor is switched into a switched-off switching state in the event that the drain-source voltage is greater than the voltage comparison value. For the purpose of providing a temperature compensation of the protection, the temperature of the field-effect transistor is detected; and the voltage comparison value is adjusted depending on the temperature. The voltage comparison value is, in addition, also dependent on time during the switched-on switching state.

Protection of a field-effect transistor, which is operated in a switching mode, against an overload current

A method of driving a transistor includes generating an off-current during a plurality of turn-off switching events to control a gate voltage at a gate terminal of the transistor, wherein generating the off-current includes sinking a first portion of the off-current from the gate terminal to discharge a first portion of the gate voltage, and sinking, during a boost interval, a second portion of the off-current from the gate terminal to discharge a second portion of the gate voltage; measuring a transistor parameter indicative of an oscillation of a drain-source voltage of the transistor for a first turn-off switching event during which the transistor is transitioned off; activating the first portion of the off-current for a second turn-off switching event; and activating the second portion of the off-current for the second turn-off switching event, including regulating a length of the boost interval based on the measured transistor parameter.

Actively tracking switching speed control of a power transistor

A drive device () with a converter function for a vehicle () has at least one first motor connection and one second motor connection for connecting the drive device () to a converter (), a least one first motor coil and one second motor coil, wherein a first connection of the first motor coil is connected to the first motor connection and a first connection of the second motor coil is connected to the second motor connection, at least one first intermediate tap and one second intermediate tap, wherein the first intermediate tap is connected to a first tap point of the first motor coil and the second intermediate tap is connected to a first tap point of the second motor coil, and at least one first supply line connection and one second supply line connection for connecting the drive device () to an AC voltage supply line, wherein the first supply line connection is connected to the first intermediate tap and the second supply line connection is connected to the second intermediate tap.

Driving device comprising a transformer function, driving system and method for operating a driving device

A switching half-bridge has two field-effect transistors and a supplementary circuit arranged upstream of a gate terminal of a first field-effect transistor and formed of a first circuit branch having a damping resistor and an inductor connected in series with the damping resistor and a second circuit branch being connected in parallel with the first circuit branch and having a series resistor and an auxiliary switch connected in series with the series resistor. The half-bridge can be switched from a first switching state to a second switching state, wherein while the auxiliary switch is open, a change in the control voltage causes the first circuit branch to temporarily change the gate-source voltage of the first field-effect transistor from the switch-on level to a second switch-off level greater than a first switch-off level, with the gate-source voltage thereafter returning to the first switch-off level.

Growing community of inventors

Erlangen, Germany

Mark-Matthias Bakran