The Science and Technology Facilities Council

Mark Lyndon Prydderch

Renato Andrea Danilo Turchetta

Andrew David Ward

Stanley Walter Botchway

Michael Towrie

Giulio Enrico Villani

An accelerated electron detector comprises an array of monolithic sensors in a CMOS structure, each sensor comprising a substrate (), an epi layer (), a p+ well () and n+ wells () which are separated from the p+ well () by the epi layer (). Integrated in the p+ well are a plurality of NMOS transistors. The sensor also includes a deep n region () beneath the p+ well () which establishes within the epi layer a depletion layer so that on application of a biasing voltage charge carriers generated in the epi layer are caused to drift to the n+ well (). The detector has improved radiation hardness and it therefore suitable for the detection and imaging of accelerated electrons such as in electron microscopes.

Accelerated particle and high energy radiation sensor

An imaging device using an array of active pixels, with a readout control for outputting from selected regions of interest is disclosed. When used to detect the positions of optically trapped objects, the fast readout rate enables fine control of the optical traps to stabilize the objects. Multiple objects can be controlled while being moved relative to each other.

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Farringdon, United Kingdom

Mark Lyndon Prydderch