Globalfoundries U.S. Inc.

Globalfoundries Inc.

Mark Levy

Siva P Adusumilli

John J Ellis-Monaghan

Vibhor Jain

Ramsey M Hazbun

Alvin Jose Joseph

Johnatan A Kantarovsky

Jeonghyun Hwang

Steven M Shank

Anthony K Stamper

Yusheng Bian

Rajendran Krishnasamy

Qizhi Liu

Michael Joseph Zierak

Cameron E Luce

Steven J Bentley

Yves T Ngu

Ephrem G Gebreselasie

Ajay Raman

Sarah A McTaggart

Spencer H Porter

James William Adkisson

Zhong-Xiang He

Robert K Leidy

Francois Hebert

Jagar Singh

Michel J Abou-Khalil

Edward William Kiewra

Bruce Walter Porth

Uzma B Rana

James Randall Elliott

Venkata N R Vanukuru

Gary L Milo

Brett T Cucci

Aaron Vallett

Pernell Dongmo

Andre Sturm

Paula Fisher

Laura J Silverstein

Richard J Rassel

Fuad H Al-Amoody

Felix P Anderson

Kristin Marie Welch

Lawrence Selvaraj Susai

A structure includes a lab-on-chip (LOC) sensor and frontside port and cavity features for conveying a flowable sample (fluid or gas) to a sensing element of the sensor. The cavity is confined within middle of the line (MOL) dielectric layer(s). Alternatively, the cavity includes a lower section within MOL dielectric layer(s), an upper section within back end of the line (BEOL) dielectric layer(s) in the first metal (M1) level, a divider between the sections, and a duct linking the sections. Alternatively, the cavity includes a lower portion within MOL dielectric layer(s) and an upper portion continuous with the lower portion and within BEOL dielectric layer(s) in the M1 level. Optionally, the cavity is separated from the sensing element by an additional dielectric layer and/or at least partially lined with a dielectric liner. The port extends from the top of the BEOL dielectric layers down to the cavity.

Semiconductor structure with frontside port and cavity features for conveying sample to sensing element

Structures for a waveguide and methods of forming a waveguide. The structure comprises a substrate, a waveguide core comprising a compound semiconductor material, and a layer disposed on the substrate. The layer comprises the compound semiconductor material, and the layer includes a cavity positioned beneath the waveguide core.

Compound-semiconductor waveguides with airgap cladding

Structures including a compound-semiconductor-based device and a silicon-based device integrated on a semiconductor substrate and methods of forming such structures. The structure includes a first semiconductor layer having a top surface and a faceted surface that fully surrounds the top surface. The top surface has a first surface normal, and the faceted surface has a second surface normal that is inclined relative to the first surface normal. A layer stack that includes second semiconductor layers is positioned on the faceted surface of the first semiconductor layer. Each of the second semiconductor layers contains a compound semiconductor material. A silicon-based device is located on the top surface of the first semiconductor layer, and a compound-semiconductor-based device is located on the layer stack.

Integration of compound-semiconductor-based devices and silicon-based devices

Disclosed is a semiconductor structure including a device (e.g., a field effect transistor (FET), a biosensor FET (bioFET) or an ion-sensitive FET (ISFET)) with a fluid-based gate. The structure includes a substrate, an intermediate layer on the substrate, and a semiconductor layer on the intermediate layer. The device includes, within the semiconductor layer, a source region, a drain region, and a channel region between the source and drain regions. The structure includes, for the fluid-base gate, a cavity within the intermediate layer below the channel region and lined with a dielectric liner. Optionally, the exposed surface of the dielectric liner within the cavity is functionalized. Additional dielectric layers are stacked on the semiconductor layer and at least one port extends essentially vertically through the dielectric layers, the semiconductor layer and the dielectric liner to the cavity so as to allow fluid for the fluid-based gate to flow into the cavity.

Field effect transistor with buried fluid-based gate and method

The present disclosure relates to semiconductor structures and, more particularly, to switches in a bulk substrate and methods of manufacture. The structure includes: at least one active device having a channel region of a first semiconductor material; a single air gap under the channel region of the at least one active device; and a second semiconductor material being coplanar with and laterally bounding at least one side of the single air gap, the second semiconductor material being different material than the first semiconductor material.

Switches in bulk substrate

Disclosed is a semiconductor structure with a photodiode including: a well region with a first-type conductivity in a substrate, a trench in the well region, and multiple conformal semiconductor layers in the trench. The semiconductor layers include a first semiconductor layer, which is, for example, an intrinsic semiconductor layer and lines the trench, and a second semiconductor layer, which has a second-type conductivity and which is on the first semiconductor layer within (but not filling) the trench and which also extends outside the trench onto a dielectric layer. An additional dielectric layer extends over and caps a cavity that is at least partially within the trench such that surfaces of the second semiconductor layer are exposed within the cavity. Fluid inlet/outlet ports extend to the cavity and contacts extend to the well region and to the second semiconductor layer. Also disclosed are methods for forming and using the semiconductor structure.

Semiconductor structure including photodiode-based fluid sensor and methods

Structures for a transistor including regions for landing gate contacts and methods of forming a structure for a transistor that includes regions for landing gate contacts. The structure includes a field-effect transistor having a source region, a gate region, a gate with a sidewall, and a gate extension with a section adjoined to the sidewall. The structure further includes a dielectric layer over the field-effect transistor, and a gate contact positioned in the dielectric layer to land on at least the section of the gate extension.

Contact-over-active-gate transistor structures with contacts landed on enlarged gate portions

The present disclosure relates generally to structures in semiconductor devices and methods of forming the same. More particularly, the present disclosure relates to high electron mobility transistor (HEMT) devices having a silicided polysilicon layer. The present disclosure may provide an active region above a substrate, source and drain electrodes in contact with the active region, a gate above the active region, the gate being laterally between the source and drain electrodes, a polysilicon layer above the substrate, and a silicide layer on the polysilicon layer. The active region includes at least two material layers with different band gaps. The polysilicon layer may be configured as an electronic fuse, a resistor, or a diode.

High electron mobility transistor devices having a silicided polysilicon layer

The present disclosure relates to semiconductor structures and, more particularly, to multi-channel transistors and methods of manufacture. The structure includes: a gate structure; a single channel layer in a channel region under the gate structure; a drift region adjacent to the gate structure; and multiple channel layers in the drift region coupled to the single channel layer under the gate structure.

Multi-channel transistor

Disclosed are a structure with a multi-level field plate and a method of forming the structure. The field plate includes multiple first conductors on a dielectric layer and separated from each other by spaces with different widths (e.g., by with progressively decreasing widths). A conformal additional dielectric layer extends over the first conductors and onto the dielectric layer within the spaces. The field plate also includes, on the additional dielectric layer, second conductor(s) with portions thereof extending into the spaces. Within the spaces, the second conductor portions are at different heights (e.g., at progressively increasing heights) above the dielectric layer. Such a field plate can be incorporated into a transistor (e.g., a high electron mobility transistor (HEMT)) to, not only reduce the peak of an electric field exhibited proximal to a gate terminal, but to ensure the electric field is essentially uniform level between the gate and drain terminals.

Structure including multi-level field plate and method of forming the structure

The present disclosure relates to semiconductor structures and, more particularly, to field effect transistors and methods of manufacture. The structure includes: at least one gate structure having source/drain regions; at least one isolation structure within the source/drain regions in a substrate material; and semiconductor material on a surface of the at least one isolation structure in the source/drain regions.

Field effect transistor

Disclosed are a transistor and a method for forming the transistor. The method includes concurrently forming gate and source/drain openings through an uppermost layer (i.e., a dielectric layer) in a stack of layers. The method can further include: depositing and patterning gate conductor material so that a first gate section is in the gate opening and a second gate section is above the gate opening and so that the source/drain openings are exposed; extending the depth of the source/drain openings; and depositing and patterning source/drain conductor material so that a first source/drain section is in each source/drain opening and a second source/drain section is above each source/drain opening. Alternatively, the method can include: forming a plug in the gate opening and sidewall spacers in the source/drain openings; extending the depth of source/drain openings; depositing and patterning the source/drain conductor material; and subsequently depositing and patterning the gate conductor material.

Transistor with multi-level self-aligned gate and source/drain terminals and methods

Structures including devices, such as transistors, integrated on a bulk semiconductor substrate and methods of forming a structure including devices, such as transistors, integrated on a bulk semiconductor substrate. The bulk semiconductor substrate contains a single-crystal semiconductor material having a diamond crystal lattice structure and a <111> crystal orientation. A first transistor is formed in a first device region of the bulk semiconductor substrate, and a second transistor is formed in a second device region of the bulk semiconductor substrate. The second transistor includes a layer stack on the bulk semiconductor substrate, and the layer stack includes a layer comprised of a III-V compound semiconductor material.

Device integration schemes leveraging a bulk semiconductor substrate having a <111> crystal orientation

Disclosed is an integrated circuit (IC) structure that includes a through-metal through-substrate interconnect. The interconnect extends essentially vertically through a device level metallic feature on a frontside of a substrate, extends downward from the device level metallic feature into or completely through the substrate (e.g., to contact a backside metallic feature below), and extends upward from the device level metallic feature through interlayer dielectric (ILD) material (e.g., to contact a BEOL metallic feature above). The device level metallic feature can be, for example, a metallic source/drain region of a transistor, such as a high electron mobility transistor (HEMT) or a metal-insulator-semiconductor high electron mobility transistor (MISHEMT), which is formed on the frontside of the substrate. The backside metallic feature can be a grounded metal layer. The BEOL metallic feature can be a metal wire in one of the BEOL metal levels. Also disclosed is an associated method.

Integrated circuit structure with through-metal through-substrate interconnect and method

The present disclosure relates to semiconductor structures and, more particularly, to airgap structures in a doped region under one or more transistors and methods of manufacture. The structure includes: a semiconductor material comprising a doped region; one or more sealed airgap structures breaking up the doped region of the semiconductor material; and a field effect transistor over the one or more sealed airgap structures and the semiconductor material.

Airgap structures in auto-doped region under one or more transistors

Growing community of inventors

Williston, VT, United States of America

Mark Levy