Gte Laboratories Incorporated

Mark Levinson

Brian M Ditchek

Ben G Yacobi

Alfred H Bellows

Philip G Rossoni

Frederick Rock

A superconducting coil assembly. The assembly includes an insulating substrate, a plurality of insulating layers disposed in a stacked assembly on the substract, and a superconducting spiral pattern between the substrate and the adjacent insulating layer and between each adjacent pair of insulating layers. Superconducting connecting portions connect the spiral patterns to form a continuous thick film superconducting coil of right hand or left hand orientation. The spiral patterns and connecting portions are thick films of a high temperature ceramic superconducting material. A superconducting connecting link may interconnect the ends of the continuous coil to form a closed loop. The insulating layers and spiral patterns may be deposited successively over an insulating substrate. Alternatively, the insulating layers may be annular disks with vias therethrough for connecting the spiral patterns. Preferably, the cross-sectional area of each coil portion varies inversely with its radius to effect a constant critical current capacity throughout each coil portion. A method for producing the coil assembly is also disclosed.

Formed-to-shape superconducting coil

A junction field effect transistor having an array of electrically floating gate elements located between the control gate and the drain in the path of current flow from the source to the drain. As the drain voltage increases the depletion zone of the control gate expands until it reaches the nearest floating gate. The maximum electric field at the control gate is clamped while the nearest floating gate increases in potential and its depletion zone expands toward the next floating gate, and so on. In this way the applied voltage is spread over the array of floating gates clamping the maximum electric field at a value that is less than the avalanche breakdown field. Then, the avalanche breakdown voltage of the device is increased.

Floating gate array transistors

A method for preparing a highly aligned thick film of superconducting bismuth strontium calcium copper oxide ceramic material to improve its critical current density. A film about 5-200 .mu.m thick of bismuth strontium calcium copper oxide is deposited on a suitable substrate. The ratios of Bi:(Sr, Ca):Cu in the film are about 2:3:2 to 2:4:3. A laser beam is translated over the deposited film at a rate of about 0.2-15 cm/hr while the film is held at a temperature of about 500.degree.-950.degree. C. The beam is about 0.01-0.50 cm wide along the direction of translation, and provides about 0.2-10W of optical power to the film. The temperature and the beam translation rate, width, and optical power are selected to permit zone melting and resolidification of the film to form the highly aligned thick film of superconducting bismuth strontium calcium copper oxide ceramic material. The J.sub.c may, if desired, be further improved by annealing the resolidified film at about 900.degree.-965.degree. C. for about 1-300 hr.

Laser zone melted Bi--Sr--Ca--Cu--O thick films

A semiconductor photodetector having a body which includes a matrix of semiconductor material, specifically silicon, having an array of individual rods of conductive material, specifically TaSi.sub.2, disposed therein. The rods form Schottky barriers with the semiconductor material. An ohmic contact is made to several of the rods at one end, and an ohmic contact is made to the semiconductor material of the matrix. Incident radiation is directed at a surface of the body containing the opposite ends of the rods. A detector is connected between the two ohmic contacts and detects current flow generated in response to incident radiation impinging on the body.

Radiation detecting apparatus

A semiconductor radiation detector having a body which includes a matrix of semiconductor material, specifically silicon, having an array of individual rods of conductive material, specifically TaSi.sub.2, disposed therein. The rods form Schottky barriers with the semiconductor material. A set of contacts spaced along the length of the body each make ohmic contact to several rods at one end of each rod, and an ohmic contact is made to the semiconductor material of the matrix. Incident radiation is directed at a surface of the body which lies parallel to the rods. Detectors connected to each of the contacts along the length of the body detect current flow generated in the vicinity of the rods associated with each contact member by radiation penetrating into the body to that depth.

Semiconductor radiation detecting device

A thin film electroluminescent device including a transparent substrate having a smooth, planar exterior surface and a rough, non-planar interior surface. Layers of a first transparent electrode of indium tin oxide or tin oxide, an insulating material, for example, silicon oxynitride, manganese activated zinc sulfide, an insulating material, and a second electrode of aluminum are deposited in order on the rough, non-planar interior surface of the substrate. The rough, non-planar interface between the phosphor and insulating material provides surfaces at different angles to the light generated within the phosphor layer preventing light from being trapped within the phosphor layer.

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Sudbury, MA, United States of America

Mark Levinson