International Business Machines Corporation

Mark L Reath

Justin W Wong

Edward P Higgins

Arne Watson Ballantine

Roger W Cheek

Richard L Kleinhenz

Michael B Rice

Brian Christopher Barker

Gary R Moore

Douglas S Armbrust

John M Baker

Doreen D DiMilia

Horst Zisgen

James A Gallo

Barbara L Shiffler

Kevin M Boyd

A solution for managing a manufacturing environment using operating data for each of a plurality of tools in the manufacturing environment. The operating data can include actual resource consumption data and/or actual exhaust generation data for a tool while the tool implements at least a portion of a recipe to manufacture one of a plurality of types of products manufactured in the manufacturing environment. Operation of the manufacturing environment can be configured to optimize one or more aspects of resource consumption and/or exhaust generation during the manufacture of desired quantities of the plurality of types of products within a desired time frame using the operating data.

Manufacturing management using tool operating data

A processing system and method. The processing system includes a processing tool, an electrostatic chuck (ESC) arranged within the processing tool, and a system that at least one of detects at least one of an ESC bias spike and an ESC current spike of the ESC and determines when an ESC bias voltage is zero or exceeds a threshold value. The method includes at least one of detecting at least one of an ESC bias spike and an ESC current spike of the ESC, and determining when an ESC bias voltage is zero or exceeds a threshold value. The system and method can be used in real time ESC and plasma processing diagnostics to minimize yield loss and wafer scrap.

In situ monitoring of wafer charge distribution in plasma processing

A method and apparatus are provided for controlling a CVD process used to deposit films on semiconductor substrates wherein the by-products of the reaction are measured and monitored during the reaction preferably using mass spectrometry and the results used to calculate the concentrations of the by-products and to control the CVD reaction process based on the by-product concentrations. An exemplary CVD process is the deposition of tungsten metal on a semiconductor wafer. A preferred method and apparatus uses a capillary gas sampling device for removing the by-product gases of the reaction as a feed for the mass spectrometer. The capillary gas sampling device is preferably connected to a differential pump.

In-situ monitoring of chemical vapor deposition process by mass spectrometry

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Mark L Reath