Hrl Laboratories, LLC

Mark K Yu

Adele E Schmitz

Robert H Walden

Mark Lui

A Schottky diode, and a method of making the same, which is fabricated on InP material and employs a Schottky layer including In Al As with x>0.6, or else including a chirped graded supperlattice in which successive periods of the superlattice contain progressively less GaInAs and progressively more AlInAs, the increase in AlInAs being terminated before the proportion of AlInAs within the last period (adjacent the anode metal) exceeds 80%. Such fabrication creates an InP-based Schottky diode having a low turn-on voltage which may be predictably set within a range by adjusting the fabrication parameters.

Low turn-on voltage InP Schottky device and method

A Schottky diode, and a method of making the same, which is fabricated on InP material and employs a Schottky layer including In,Al,AS with x>0.6, or else including a chirped graded superlattice in which successive periods of the superlattice contain progressively less GaInAs and progressively more AlInAs, the increase in AlInAs being terminated before the proportion of AlInAs within the last period (adjacent the anode metal) exceeds 80%. Such fabrication creates an InP-based Schottky diode having a low turn-on voltage which may be predictably set within a range by adjusting the fabrication parameters

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Mark K Yu