Applied Materials, Inc.

National University of Singapore

Wayne State University

Other

Varian Semiconductor Equipment Associates, Inc.

Mark Joseph Saly

Bhaskar Jyoti Bhuyan

Thomas Knisley

David P Thompson

Lakmal Charidu Kalutarage

Mihaela A Balseanu

Ning Li

Feng Quan Liu

David Michael Thompson

Li-Qun Xia

Abhijit Basu Mallick

Keenan Navarre Woods

Lisa J Enman

Susmit Singha Roy

Regina Germanie Freed

Aaron Dangerfield

Jeffrey W Anthis

David Alexander Britz

Madhur Sachan

Kelvin Chan

Doreen Wei Ying Yong

John Leonard Sudijono

Pravin K Narwankar

Lance A Scudder

Charles H Winter

Yuriy Melnik

Liqi Wu

Sukti Chatterjee

Victor Nguyen

Cong Trinh

William John Durand

Philip Allan Kraus

Jonathan Stuart Frankel

Kaushal Gangakhedkar

Zeqing Shen

Andrea Leoncini

Paul Mehlmann

Nemanja Dordevic

Han Vinh Huynh

Pramit Manna

Schubert S Chu

Errol Antonio C Sanchez

Qian Fu

Abhishek Dube

Mingwei Zhu

Zhenjiang Cui

Xiangjin Xie

Tobin Kaufman-Osborn

Bo Qi

Lei Zhou

Kevin Kashefi

David Knapp

Steven D Marcus

Maribel Maldonado-Garcia

Wenyi Liu

Yang Yang

Jennifer Y Sun

Michael Patrick Chudzik

Xianmin Tang

Deenesh Padhi

Anantha K Subramani

Kallol Bera

Rongjun Wang

Avgerinos V Gelatos

Hanhong Chen

Roger Allan Quon

Hung Phi Nguyen

Thai Cheng Chua

Mandyam Sriram

Michael D Willwerth

Suketu Arun Parikh

Joseph R Johnson

Kang Sub Yim

Jingmei Liang

Eswaranand Venkatasubramanian

Joung Joo Lee

Praket Prakash Jha

Benjamin Schmiege

Annamalai Lakshmanan

Leonard Michael Tedeschi

Hang Yu

Yaoling Pan

Patrick John Tae

Tatsuya E Sato

Sanjay G Kamath

Rajesh Sathiyanarayanan

Tsung-Liang Chen

Kenichi Ohno

Jiang Lu

Michael G Haverty

Jessica Sevanne Kachian

Jie Zhang

Alexander Jansen

Yijun Liu

Keiichi Tanaka

Farzad Houshmand

Shaunak Mukherjee

Daniel Thomas McCormick

Raghav Sreenivasan

Xiaopu Li

Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

Molybdenum (0) precursors for deposition of molybdenum films

A method includes providing, within an etch chamber, a base structure including a target layer disposed on a substrate, and an etch mask disposed on the target layer, dry etching, within the etch chamber, the target layer using thionyl chloride to obtain a processed base structure, and after forming the plurality of features. The processed base structure includes a plurality of features and a plurality of openings defined by the etch mask. The method further includes removing the processed base structure from the etch chamber. In some embodiments, the target layer includes carbon. In some embodiments, the dry etching is performed at a sub-zero degree temperature.

Dry etching with etch byproduct self-cleaning

A method includes selectively forming at least one passivation layer on at least one first conductive layer disposed in a first interlevel dielectric (ILD) layer, selectively forming at least one catalyst layer on the at least one passivation layer, wherein the at least one passivation layer prevents formation of the at least one catalyst layer on the first conductive layer, and selectively forming at least one supplemental dielectric layer using the at least one catalyst layer. The at least one catalyst layer induces formation of the at least one supplemental dielectric layer, and the at least one supplemental dielectric layer includes a dielectric material having a dielectric constant of less than or equal to about 4.

Electronic device fabrication using area-selective deposition

Metal complexes with nitrile ligands of the type MOXL, where M is molybdenum or tungsten, X is a halogen, each L is independently an organonitrile ligand with the general formula NCR, where each R is independently a C2-C18 group. Metal complexes with dinitrile bidentate ligands of the type MOXL', where L′ is a dintrile ligand, and dinitrile bridging ligands of the type (MOX)L′, where L′ is a dinitrile bridging ligand connecting the two metal atoms. Methods of making and using the metal complexes are described.

Metal organonitrile precursors for thin film deposition

Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

Molybdenum(0) precursors for deposition of molybdenum films

A method includes forming a first layer and a second layer on a substrate, forming a passivation layer on a surface of the first layer without forming the passivation layer on a surface of the second layer by exposing the first layer and the second layer to a benzyl compound, and after forming the passivation layer on the first layer, performing at least one of: depositing a third layer on the second layer, or etching the second layer.

Benzyl compound passivation for selective deposition and selective etch protection

Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(RHSi)—(RHSi)]PHR', where each instance of R and each instance of R′ are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.

Method for forming silicon-phosphorous materials

Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate comprises a) removing oxide from a metal layer disposed in a dielectric layer on the substrate disposed in a processing chamber, b) selectively depositing a self-assembled monolayer (SAM) on the metal layer using atomic layer deposition, c) depositing a precursor while supplying water to form one of an aluminum oxide (AlO) layer on the dielectric layer or a low-k dielectric layer on the dielectric layer, d) supplying at least one of hydrogen (H) or ammonia (NH) to remove the self-assembled monolayer (SAM), and e) depositing one of a silicon oxycarbonitride (SiOCN) layer or a silicon nitride (SiN) layer atop the metal layer and the one of the aluminum oxide (AlO) layer on the dielectric layer or the low-k dielectric layer on the dielectric layer.

Methods and apparatus for selective etch stop capping and selective via open for fully landed via on underlying metal

A method includes performing a dry etch process to remove a portion of a first layer disposed on a second layer of a stack of alternating layers. The first layer includes a first material and the second layer includes a second material different from the first material, and the dry etch process forms a passivation layer including a byproduct on surfaces of the second material. A amount of first material of the portion of the first layer remains after performing the dry etch process, The method further includes introducing a halide gas to enhance the passivation layer on the surfaces of the second material.

Enhanced etch selectivity using halides

Disclosed is a coated chamber component comprising a body having a reduced metal surface such that the reduced metal surface has less metal oxide as compared to an amount of metal oxide on a metal surface that has not been reduced. The metal surface may be reduced by pulsing a reducing alcohol thereon. The reduced metal surface may be coated with a corrosion resistant film that may be deposited onto the reduced metal surface by a dry atomic layer deposition process.

Corrosion resistant film on a chamber component and methods of depositing thereof

Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

Deposition of semiconductor integration films

Embodiments of this disclosure provide methods for etching oxide materials. Some embodiments of this disclosure provide methods which selectively etch oxide materials over other materials. In some embodiments, the methods of this disclosure are performed by atomic layer etching (ALE). In some embodiments, the methods of this disclosure are performed within a processing chamber comprising a nickel chamber material.

Etching of metal oxides using fluorine and metal halides

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

Methods of selective atomic layer deposition

Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RI, where R is one or more of a C-Calkyl, C-Ccycloalkyl, C-Calkenyl, or C-Calkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.

Method of depositing metal films

Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

Methods for depositing blocking layers on conductive surfaces

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Milpitas, CA, United States of America

Mark Joseph Saly