Primestar Solar, Inc.

First Solar, Inc.

Blender Products, Inc.

Alliance for Sustainable Energy, LLC

First Solar Malaysia Sdn. Bhd.

Primestar, Inc.

Mark Jeffrey Pavol

Max William Reed

Scott Daniel Feldman-Peabody

Christopher Rathweg

Russell Weldon Black

Edwin Jackson Little

Brian Robert Murphy

David Charles Dorste

Kevin Deems

Bastiaan Arie Korevaar

Robert Dwayne Gossman

Adam Fraser Halverson

Jinbo Cao

Douglas Garth Jensen

James Neil Johnson

David Scott Albin

Stacy Ann Black

Frank Sanford Prescott

Bogdan Lita

Yangang Andrew Xi

Donald E Rhonehouse

Jason Scott Paulman

Nathan John Kruse

John Milton Flood, Iii

Valerie Pflumio Hill

An air mixing device mitigates temperature stratification between two incoming air streams by creation of turbulent airflow through an arrangement of channels in the device. The device also provides selective passage of air for incoming airstreams to achieve functionality for damper control typically associated with separate inlet dampers. A slotted cover plate is mounted to a downstream face of the device. The slots are disposed over the channels to determine areas through which airstreams may pass, such as return air and outdoor air introduced into an air handling unit. A method provides for selectively controlled airflow through the device so effective mixing occurs along with an economizer function to control separate airstreams such as outside air and return air. The slotted cover plate is actuated to control airflow in which flow of one airstream through the device increases as the flow of the other airstream is proportionately decreased.

Combined economizer and mixer for air handling unit

An air mixing device mitigates temperature stratification between two incoming air streams by creation of turbulent airflow through an arrangement of channels in the device. The device also provides selective passage of air for incoming airstreams to achieve functionality for damper control typically associated with separate inlet dampers. A method provides for selectively controlled airflow through the device so effective mixing occurs along with an economizer function to control separate airstreams such as outside air and return air. Existing dampers may be integrated with the air mixing device to control airflow in which flow of one airstream through the device increases as the flow of the other airstream is proportionately decreased. A minimum outside air duct can be incorporated in the mixing device to efficiently satisfy building code requirements regarding monitoring and recording of outside air input to air handling units.

An air mixing device mitigates temperature stratification between two incoming air streams by creation of turbulent airflow through an arrangement of channels in the device. The device also provides selective passage of air for incoming airstreams to achieve functionality for damper control typically associated with separate inlet dampers. Static mixing plates may be employed to affect desired mixing through the device. A method provides for selectively controlled airflow through the device so effective mixing occurs along with an economizer function to control separate airstreams such as outside air and return air. Existing dampers may be integrated with the air mixing device to control airflow in which flow of one airstream through the device increases as the flow of the other airstream is proportionately decreased.

A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented.

Methods of fabricating a photovoltaic module, and related system

A method for vapor deposition of a sublimated source material, such as CdTe, onto substrates in a continuous, non-stop manner through the apparatus is provided. The sublimated source material moves through a distribution plate and deposits onto the upper surface of the substrates as they are conveyed through the deposition area. The substrates move into and out of the deposition area through entry and exit slots that are defined by transversely extending entrance and exit seals. The seals are disposed at a gap distance above the upper surface of the substrates that is less than the distance or spacing between the upper surface of the substrates and the distribution plate. The seals have a ratio of longitudinal length (in the direction of conveyance of the substrates) to gap distance of from about 10:1 to about 100:1.

Process for continuous deposition of a sublimated source material to form a thin film layer on a substrate

Thin film photovoltaic devices that include a transparent substrate; a transparent conductive oxide layer on the transparent substrate; a n-type window layer on the transparent conductive oxide layer; a p-type absorber layer on the n-type window layer; and, a back contact on the p-type absorber layer are provided. The p-type absorber layer comprises cadmium telluride, and forms a photovoltaic junction with the n-type window layer. Generally, the p-type absorber layer defines a plurality of finger structures protruding from the p-type absorber layer into the back contact. The finger structures can have an aspect ratio of about 1 or greater and/or can have a height that is about 20% to about 200% of the thickness of the p-type absorber layer. Methods of forming such finger structures protruding from a back surface of the p-type absorber layer are also provided.

Finger structures protruding from absorber layer for improved solar cell back contact

Vapor deposition apparatus for forming stacked thin films on discrete photovoltaic module substrates conveyed in a continuous non-stop manner through the apparatus are provided. The apparatus includes a first sublimation compartment positioned over a first deposition area of said apparatus, a second sublimation compartment positioned over a second deposition area of said apparatus, and an internal divider positioned therebetween and defining a middle seal member. An actuator is attached to the internal divider and is configured to move the internal divider to control intermixing of first source material vapors and second source material vapors within the first deposition area and the second deposition area. Methods are also generally provided for depositing stacked thin films on a substrate.

Vapor deposition apparatus for continuous deposition of multiple thin film layers on a substrate

A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

Method for making photovoltaic devices using oxygenated semiconductor thin film layers

Process and apparatus are generally provided for forming a thin film photovoltaic device. In one particular embodiment, the process includes: depositing a photovoltaic absorber layer on a glass substrate; heating the glass substrate to an anneal temperature; and quenching the glass substrate to cool the glass substrate to a quenched temperature in less than 10 seconds. The quenched temperature can be about 85&#xb0; C. to about 200&#xb0; C. less than the anneal temperature. The quenching atmosphere can have a quenching pressure of about 1 torr or more and can include an inert gas.

Heat strengthening of a glass superstrate for thin film photovoltaic devices

A system for vapor deposition of a thin film layer on a photovoltaic module substrate is provided. The system includes a vacuum chamber having a pre-heat section, a vapor deposition apparatus, and a cool-down section; and a conveyor system operably disposed within said vacuum chamber and configured for conveying the substrates in a serial arrangement from said pre-heat section and through said vapor deposition apparatus at a controlled constant linear speed. The vapor deposition apparatus is configured for depositing a thin film of a sublimed source material onto an upper surface of the substrates as the substrates are continuously conveyed by said conveyor system through said vapor deposition apparatus.

Modular system and process for continuous deposition of a thin film layer on a substrate

A system and associated process for vapor deposition of a thin film layer on a photovoltaic (PV) module substrate is includes establishing a vacuum chamber and introducing the substrates individually into the vacuum chamber. A conveyor system is operably disposed within the vacuum chamber and is configured for conveying the substrates in a serial arrangement through a vapor deposition apparatus within the vacuum chamber at a controlled constant linear speed. A post-heat section is disposed within the vacuum chamber immediately downstream of the vapor deposition apparatus in the conveyance direction of the substrates. The post-heat section is configured to maintain the substrates conveyed from the vapor deposition apparatus in a desired heated temperature profile until the entire substrate has exited the vapor deposition apparatus.

A system for vapor deposition of a thin film layer on photovoltaic (PV) module substrates includes a system for cool-down of the vacuum chamber through which substrates are conveyed in a vapor deposition process. The cool-down system is configured with the vacuum chamber to recirculate a cooling gas through the vacuum chamber and through an external heat exchanger in a closed cool-down loop. An associated method for forced cool-down of the vacuum chamber is also provided.

Cool-down system and method for a vapor deposition system

An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus. The distribution plate includes a pattern of holes therethrough that further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate.

Vapor deposition apparatus and process for continuous deposition of a thin film layer on a substrate

An apparatus and associated method of operation is provided for vapor deposition of a sublimated source material, such as CdTe, as a thin film on discrete photovoltaic (PV) module substrates that are conveyed in a continuous, non-stop manner through the apparatus. The apparatus includes a deposition head configured for receipt and sublimation of the source material. The deposition head has a distribution plate at a defined distance above a horizontal conveyance plane of an upper surface of the substrates conveyed through a deposition area within the apparatus. The sublimated source material moves through the distribution plate and deposits onto the upper surface of the substrates as they are conveyed through the deposition area. The substrates move into and out of the deposition area through entry and exit slots that are defined by transversely extending entrance and exit seals. The seals are disposed at a gap distance above the upper surface of the substrates that is less than the distance or spacing between the upper surface of the substrates and the distribution plate. The seals have a ratio of longitudinal length (in the direction of conveyance of the substrates) to gap distance of from about 10:1 to about 100:1.

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Arvada, CO, United States of America

Mark Jeffrey Pavol