Novellus Systems Incorporated

Columbia University

Mark J Willey

Steven T Mayer

David W Porter

Jonathan David Reid

Katie Qun Wang

Robert J Von Gutfeld

Robert Rash

Shantinath Ghongadi

Haiying Fu

Matthew S Thorum

Alan C West

Frederick Dean Wilmot

Tighe A Spurlin

Robert Marshall Stowell

Lee J Brogan

James E Duncan

Charles Lorenzo Merrill

Ludan Huang

Hyosang S Lee

Lian Guo

Disclosed are pre-wetting apparatus designs and methods. These apparatus designs and methods are used to pre-wet a wafer prior to plating a metal on the surface of the wafer. Disclosed compositions of the pre-wetting fluid prevent corrosion of a seed layer on the wafer and also improve the filling rates of features on the wafer.

Wetting pretreatment for enhanced damascene metal filling

Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.

Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte

Apparatus for wetting pretreatment for enhanced damascene metal filling

A method for electrofilling large, high aspect ratio recessed features with copper without depositing substantial amounts of copper in the field region is provided. The method allows completely filling recessed features having aspect ratios of at least about 5:1 such as at least about 10:1, and widths of at least about 1 &#x3bc;m in a substantially void-free manner without depositing more than 5% of copper in the field region (relative to the thickness deposited in the recessed feature). The method involves contacting the substrate having one or more large, high aspect ratio recessed features (such as a TSVs) with an electrolyte comprising copper ions and an organic dual state inhibitor (DSI) configured for inhibiting copper deposition in the field region, and electrodepositing copper under potential-controlled conditions, where the potential is controlled not exceed the critical potential of the DSI.

Through silicon via filling using an electrolyte with a dual state inhibitor

A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias.

Process for through silicon via filling

Methods and systems for monitoring electrolyte bath fluids are provided. The electrolyte bath fluids can be electroplating, electroless plating or etching solutions. The monitoring systems employ microfluidic devices, which have built in microfluidic channels and microfabricated thin-film electrodes. The devices are configured with fluid pumps to control the movement and mixing of test fluids through the microfluidic channels. The microfabricated thin-film electrodes are configured so that the plating or etching bath fluid composition can be characterized by electrochemical measurements. The monitoring methods and system provide faster measurement times, generate minimal waste, and occupy dramatically reduced physical space compared to conventional bath-monitor systems. The monitoring systems and method also provide low-cost system and methods for measuring or monitoring electroless plating bath rates.

Systems and methods for monitoring plating and etching baths

The working electrode in the flow channel of a flow-through electrolytic detection cell is preconditioned by flowing a preconditioning electroplating solution with preconditioner species through the flow channel while applying a negative potential. Flow of liquid through the flow channel is rapidly switched from preconditioning solution to a target solution containing an organic target solute to be measured. The transient response of the system resulting from exposure of the working electrode to organic target solute is detected by measuring current density during an initial transient time period. An unknown concentration of target solute is determined by comparing the transient response with one or more transient responses characteristic of known concentrations. A preferred measuring system is operable to switch flow from preconditioning solution to target solution in about 200 milliseconds or less.

Monitoring of electroplating additives

Process for through silicon via filing

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Portland, OR, United States of America

Mark J Willey