Other

Sandia National Laboratories

Mark J Mescher

Ralph B James

Haim Hermon

Tuviah E Schlesinger

A photolithographic process forms patterns on HgI surfaces and defines metal sublimation masks and electrodes to substantially improve device performance by increasing the realizable design space. Techniques for smoothing HgI surfaces and for producing trenches in HgI are provided. A sublimation process is described which produces etched-trench devices with enhanced electron-transport-only behavior.

Lithography process for patterning HgI2 photonic devices

A method for reducing the leakage current in CZT crystals, particularly Cd.sub.1-x Zn.sub.x Te crystals (where x is greater than equal to zero and less than or equal to 0.5), and preferably Cd.sub.0.9 Zn.sub.0.1 Te crystals, thereby enhancing the ability of these crystal to spectrally resolve radiological emissions from a wide variety of radionuclides. Two processes are disclosed. The first method provides for depositing, via reactive sputtering, a silicon nitride hard-coat overlayer which provides significant reduction in surface leakage currents. The second method enhances the passivation by oxidizing the CZT surface with an oxygen plasma prior to silicon nitride deposition without breaking the vacuum state.

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Auburndale, MA, United States of America

Mark J Mescher