International Business Machines Corporation

Other

Globalfoundries Inc.

Mark J Hurley

Vijay Narayanan

Michael Patrick Chudzik

Herbert Lei Ho

Martin Michael Frank

Ravikumar Ramachandran

Vamsi Krishna Paruchuri

Dae-Gyu Park

Naim Moumen

Rashmi Jha

Paul Daniel Kirsch

Jeremy John Kempisty

Suri G Hedge

Lance Genicola

AC condensate drain line evacuation adapter with viewport

AC condensate drain line evacuation adapter

Ion implantation to change an effective work function for dual work function metal gate integration is presented. One method may include forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region; forming a metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and changing the first effective work function to a second, different effective work function over the second-type FET region by implanting a species into the metal layer over the second-type FET region.

Changing effective work function using ion implantation during dual work function metal gate integration

An air conditioner condensate drain line evacuation adapter formed from a housing member having an end wall constructed and arranged for securement to various sized suction hoses used on conventional wet vacuums. A second end of the housing member is securable to the discharge end of a condensate drain located on the exterior of a building. Portions of the housing member can include transparent sections to permit a visual of the fluid evacuation.

A method for monitoring a nitridation process, including: (a) providing a semiconductor substrate; (b) forming a first dielectric layer on a top surface of the substrate; (c) introducing a quantity of interfacial species into the substrate; (d) removing the first dielectric layer; (e) forming a second dielectric layer on the top surface of the substrate; (f) measuring the density of interface traps between the substrate and the second dielectric layer; (g) providing a predetermined relationship between the quantity of the interfacial species and the density of the interface traps; and (h) determining the quantity of the interfacial species introduced based on the relationship.

Method of monitoring introduction of interfacial species

Method of monitoring introduction on interfacial species

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Poughkeepsie, NY, United States of America

Mark J Hurley