Phillips Petroleum Company

Mark J Dreiling

Timothy W Johnson

Ashish M Sukhadia

George A Moczygemba

Edwin Boudreaux, Jr

Kevin J Hess

Frankie K Wood-Black

A gel defect detection system for the optical inspection of defects in oriented transparent and translucent sheet. The system utilizes two polarizing filters with adjustable orientations so that the transmission axis is from about 70 degrees to about 110 degrees or from about 80 degrees to about 100 degrees. The system uses these polarization filters to help distinguish gel defects from the surrounding oriented sheet.

Apparatus and process for detecting the presence of gel defects in

A charge dissipating article having a poly(arylene sulfide) polymer surface with a semiconductive layer for static charge dissipation and/or induction shielding made by forming a laminate of a poly(arylene sulfide) substrate against a copper foil sheet at a temperature above the melting point of the PAS substrate, wherein the copper foil sheet has been treated with a silane selected from a specific group. When the laminate is cooled and the copper foil peeled away, a poly(arylene sulfide) substrate having a semiconductive surface coating is obtained.

Semiconducting poly (arylene sulfide) surfaces

A defect detection system for the optical inspection of defects in transparent and translucent sheets of materials. The system utilizes the differing optical properties of different defects to distinguish between such defects as fisheye defects, speck defects and scratches.

Apparatus and process for detecting the presence of defects on a moving

A method for coating a poly(arylene sulfide) polymer surface with a semiconductive layer for static charge dissipation and/or induction shielding comprises laminating a poly(arylene sulfide) substrate against a copper foil sheet at a temperature above the melting point of the PAS substrate, wherein the copper foil sheet has been treated with a silane selected from a specific group. When the laminate is cooled and the copper foil peeled away, a poly(arylene sulfide) substrate having a semiconductive surface coating is obtained.

Method for forming semiconducting poly(arylene sulfide) surfaces

A method for healing physical defects in semiconductive films is described. A transparent substrate and semiconductive film are passed to a vacuum chamber in which the film layer is contacted with an activating vapor such as mercury and a depositing vapor such as silane while light is passed through the transparent substrate from the side opposite the film and into the vacuum chamber through any defects in the film. The light activates the mercury vapor and deposits silicon hydride in the defect areas, thus providing a physically healed semiconductive film.

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Bartlesville, OK, United States of America

Mark J Dreiling