Princeton Lightwave, Inc.

Lg Innotek Co., Ltd.

Argo Ai Gmbh

Jds Uniphase Corporation

Argo Al, LLC

Princeton Lightware, Inc.

Mark Itzler

Brian Piccione

Rafael Ben-Michael

Xudong Jiang

Krystyna Slomkowski

Harold Y Hwang

Sabbir Sajjad Rangwala

John Hostetler

Ketan Mukund Patel

Matthew T O'grady

Yakov G Soskind

Scott A Merritt

Bruce Nyman

William Paul Mordarski

Nicholos J Codd

Chen Show Wang

Krys Slomkowski

Steven Kwan

Suzanne McCoy

John L Hostetler

Systems and methods are described for optical processing. According to some aspects an optical processing apparatus may include a pixelated photodiode array (PDA), each pixel in the PDA includes a radiation detector. The apparatus also includes a read out integrated circuit (ROIC) that includes a logic circuit and a plurality of switch elements. The plurality of switch elements being switchable between an armed state for arming its corresponding radiation detector and transmitting a signal received from the corresponding detector to the ROIC, and a disarmed state for disarming its corresponding detector and blocking transmittal of the signal, wherein in the armed state, the PDA is configured to detect an incoming optical signal and in the disarmed state, the PDA is configured to disregard the incoming optical signal. Moreover, the logic circuit controls a switch state of a selectable switch element associated with a radiation detector.

Systems and methods for pixel on-off switching in focal plane arrays

A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.

Geiger-mode focal plane array having increased tolerance to optical overstress

Systems and methods are described for optical processing. According to some aspects an apparatus may include a pixelated photodiode array (PDA), wherein each pixel in the PDA includes a radiation detector. The optical processing apparatus may also include a memory that stores one or more characteristics for each pixel in the PDA, and a read out integrated circuit (ROIC) communicatively coupled to the FPA and the memory. In some aspects, the ROIC reads from the memory the one or more characteristics for each pixel in the PDA, and adjusts an arm/disarm bias voltage for each pixel in the PDA based on the one or more characteristics of each pixel.

Systems and methods for breakdown voltage correction in Geiger-mode avalanche photodiode (APD) focal plane arrays (FPA)

Devices, systems, and methods are provided for reducing electrical and optical crosstalk in photodiodes. A photodiode may include a first layer with passive material, the passive material having no electric field. The photodiode may include a second layer with an absorbing material, the second layer above the first layer. The photodiode may include a diffused region with a buried p-n junction. The photodiode may include an active region with the buried p-n junction and having an electric field greater than zero. The photodiode may include a plateau structure based on etching through the second layer to the first layer, the etching performed at a distance of fifteen microns or less from the buried p-n junction.

Systems, methods, and devices for reducing optical and electrical crosstalk in photodiodes

Geiger-mode focal plane array with monolithically integrated resistors

An avalanche photodiode (APD) array with reduced cross talk comprises, in the illustrative embodiment, a 2D array of Geiger-mode APDs, wherein a via is formed partially through the backside (substrate) of each APD in the array, wherein the via is offset from the active region of each said APD.

APD focal plane arrays with backside vias

An avalanche photodiode (APD) array with reduced cross talk comprises, in the illustrative embodiment, a 2D array of Geiger-mode APDs, wherein a via is formed through the backside (substrate) of each APD in the array.

A scalable fuse design for individual pixels of a focal plane array of photodiodes comprises a fuse disposed on the upper surface of each photodiode in the array, wherein the fuse is situated proximal to a side of each photodiode. The fuse of each photodiode is electrically coupled to the active region thereof via a first bus and is electrically coupled to an ROIC via a second bus.

Article comprising a photodiode-side integrated fuse for avalanche photodetector focal plane array pixels and method therefor

A method for computing the intensity of light incident on a photodiode capable detecting single photons comprises using arrival-time statistics for a plurality of detected single photons. The statistics are based on the determination of the arrival time for each detected photon relative to the beginning of a detection period within an image frame in which the photon is detected. In some embodiments, Poisson statistics are applied to the computation of the intensity. By computing the intensity of light in this manner for each of plurality of single-photon photodetectors that compose a focal plane array, a high-contrast image of a scene can be developed.

Apparatus comprising a high dynamic range single-photon passive 2d imager and methods therefor

A negative feedback avalanche diode for detecting the receipt of a single photon is described. The photodetector comprises a load element having two load states, one characterized by high impedance and the other characterized by low impedance. The load state of the load element is controlled by a control signal generated within the negative feedback avalanche diode itself.

Two-state negative feedback avalanche diode having a control element for determining load state

A single-photon receiver is presented. The receiver comprises two SPADs that are monolithically integrated on the same semiconductor chip. Each SPAD is biased with a substantially identical gating signal. The output signals of the SPADs are combined such that capacitive transients present on each output signal cancel to substantially remove them from the output signal from the receiver.

Dual-SPAD-based single-photon receiver

Methods for forming a buried p-n junction and avalanche photodiodes incorporating same are disclosed. The method includes forming a well in a semiconductor layer, wherein a depth of the well is selected as a function of the desired shape of the p-n junction in the edge region of the avalanche photodiode. A diffusion mask is then formed on the semiconductor layer, wherein the diffusion mask includes at least two openings per APD formed, wherein one opening is a diffusion window and the other is a diffusion sink. The depth of the p-n junction in the active region of the APD is based, in part, on an attribute of the diffusion mask relating to the diffusion sink.

Method for forming a buried p-n junction and articles formed thereby

A single-photon receiver and method for detecting a single-photon are presented. The receiver comprises a SPAD that receives a gating signal having a fundamental frequency in the 100 MHz to multiple GHz range. The receiver further comprises a two-stage frequency filter for filtering the output of the SPAD, wherein the filter has: (1) a notch filter response at the fundamental frequency; and (2) a low-pass filter response whose cutoff frequency is less than the first harmonic of the fundamental frequency. As a result, the frequency filter removes substantially all the frequency components in the SPAD output without significant degradation of the signal quality but with reduced complexity, cost, and footprint requirement relative to receivers in the prior art.

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Princeton, NJ, United States of America

Mark Itzler