Imec Vzw

Imec

Katholieke Universiteit Leuven, Ku Leuven R&d

Interuniversitair Microelektronica Centrum (imec)

Mark Heyns

Cedric Huyghebaert

Rita Vos

Menso Hendriks

Amirhasan Nourbakhsh

Rene De Blank

Stefan DeGendt

Antonio L Rotondaro

Mirco Cantoro

Steven Verhaverbeke

A semiconductor device is provided comprising a bilayer graphene comprising a first and a second adjacent graphene layer, and a first electrically insulating layer contacting the first graphene layer, the first electrically insulating layer comprising an electrically insulating material, and a substance suitable for creating free charge carriers of a first type in the first graphene layer, the semiconductor device further comprising an electrically insulating region contacting the second graphene layer and suitable for creating free charge carriers of a second type, opposite to the first type, in the second graphene layer.

Graphene-based semiconductor device

Process for rinsing a metallized substrate subject to metal microcorrosion using an acidic aqueous rinsing solution wherein the rinsing solution comprises at least one strong inorganic acid in an amount enough to reduce the alkalinity of the rinse solution to a level low enough to reduce microcorrosion of the said metal layer while rinsing.

Metal rinsing process with controlled metal microcorrosion reduction

Method for semiconductor processing comprising etching of oxide layers, especially etching thick SiO.sub.2 layers and/or last step in the cleaning process wherein the oxide layers are etched in the gas phase with a mixture of hydrogen fluoride and one or more carboxylic acids, eventually in admixture with water.

Method for semiconductor processing using mixtures of HF and carboxylic

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Linden, Belgium

Mark Heyns