Nexperia B.v.

Mark Gajda

Yan Lai

Ricardo Lagmay Yandoc

Phil Rutter

Barry Wynne

Saurabh Pandey

The present disclosure relates to a semiconductor device, and associated method of manufacture. The semiconductor device includes, MOSFET integrated with a p-n junction, the p-n junction arranged as a clamping diode across a source contact and a drain contact of the MOSFET. The MOSFET defines a first breakdown voltage and the clamping diode defines a second breakdown voltage, with the first breakdown voltage being greater than the second breakdown voltage so that the clamp diode is configured and arranged to receive a low avalanche current and the MOSFET is configured and arranged to receive a high avalanche current.

Semiconductor device with integrated clamp diode

Various aspects of the disclosure are directed to circuitry coupled for controlling current flow, such as in a cascode arrangement. As may be consistent with one or more embodiments, an apparatus includes a first transistor having a gate, source, channel and drain, and a second transistor having a gate, and having a stacked source, channel and drain. A conductive clip plate electrically connects the drain of the second transistor to the source of the first transistor, and another conductor electrically connects the source of the second transistor to the gate of the first transistor. The second transistor operates with the connecting structure to provide power by controlling the first transistor in an off-state and in an on-state.

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Nijmegen, Netherlands

Mark Gajda