Teledyne Scientific and Imaging, LLC

Mark Field

William E Tennant

Gerard Sullivan

Robert L Borwick, Iii

Jonathan Bruce Hacker

Chris Hillman

Lateral collection architecture for a photodetector is achieved by depositing electrically conducting SLS layers onto a planar substrate and diffusing dopants of a carrier type opposite that of the layers through the layers at selected regions to disorder the superlattice and create diode junctions oriented transversely to the naturally enhanced lateral mobility of photogenerated charge carriers within the superlattice. The diode junctions are terminated at a top surface of the photodetector within an SLS layer of wide bandgap material to minimize unwanted currents. A related architecture disorders the superlattice of topmost SLS layers by diffusing therethrough a dopant configured as a grid and penetrating to a lower SLS layer having the same carrier type as the dopant and opposite that of the topmost layers to isolate pixels within the topmost layers. Ohmic contacts may be deposited on doped regions, pixels, and substrate to provide desired external connections.

Lateral collection architecture for SLS detectors

A waveguide component encapsulation device may include a housing having first and second surfaces, the housing defining a channel extending through the first and second surfaces, a micromachined waveguide component configured to be positioned in the channel, the waveguide component having first and second ends extending outside the channel and beyond the first and second surfaces of the housing by a finite length, and a pair of spacing members configured to align and stabilize the waveguide component within the channel.

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Thousand Oaks, CA, United States of America

Mark Field