Alcatel

Mark Feldman

Tamarak Pandhumsoporn

Tamarak Pandumsoporn

A recessed sputtering target assembly is provided with a bonding material disposed between a dielectric target and a backing plate. The bond line of the bonding material is recessed away from the edges of the target and backing plate, preferably by &frac14; inch. The sputtering target assembly may be used during high RF power processes to achieve high deposition rates without arcing of the bonding material or contamination of the sputtering chamber.

Recessed bonding of target for RF diode sputtering

A magnetron reactor for providing a high density of plasma is disclosed. The reactor comprises a plasma reactor chamber that is adapted for receiving a processing gas in the chamber and is further adapted for connection to an evacuation source. A direct current driven magnetron is positioned within the reactor chamber and is adapted to hold a sputtering target. A movable substrate supporting pedestal, adapted to hold a substrate, is positioned within the reactor and is movable so as to place the substrate sufficiently proximate to the sputtering target to enable deposition of sputter products thereon. The substrate pedestal is connected to a first radio frequency signal source through an impedence matchbox having a phase shifting adjustment means. To provide a high density inductively coupled plasma, a radio frequency antenna, having a substrate end, is positioned about the chamber. The antenna is connected to a second radio frequency signal source through an impedence matchbox. The reactor of the present invention also includes an electromagnetic coil that is positioned around and adjacent to the substrate end of the radio frequency antenna.

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Castro Valley, CA, United States of America

Mark Feldman