Intel Corporation

Mark F Buehler

Paul B Fischer

Kenneth C Cadien

Allen Daniel Feller

Larry R Fredrickson

A method of removing at least one particle from a substrate is disclosed comprising polishing a metallized layer over the substrate using a slurry to remove a portion of the metallized layer and polishing the substrate using the slurry to remove a portion of a barrier between the metallized layer and the substrate. The method further includes introducing deionized water onto the substrate and introducing a solution comprising a weak acid selected from the group consisting of acetic acid, citric acid, gluconic acid, glucuronic acid, oxalic acid, and tartaric acid.

Method for defect reduction

A composition is described that comprises an abrasive, and a hydrocarbon containing component that is coupled to the abrasive. Such a composition may be included in a slurry that is used to polish a substrate, when forming a semiconductor device. Also described is a method for modifying a surface of an abrasive that comprises coupling a hydrocarbon containing component to the surface of the abrasive.

Abrasive with a modified surface and a method for making it

A method of converting a hydrophobic surface of a dielectric layer to a hydrophilic surface is described. That method comprises forming on a substrate a dielectric layer that has a hydrophobic surface, then coupling a hydrophilic component to the surface of the dielectric layer. Also described is a method for making a semiconductor device that employs this technique after polishing a conductive layer, which may comprise copper.

Method for post-CMP conversion of a hydrophobic surface of a low-k dielectric layer to a hydrophilic surface

A method and a composition is disclosed comprising polishing the substrate using a slurry and introducing solution onto a metallized layer that comprises an acid.

Growing community of inventors

Portland, OR, United States of America

Mark F Buehler