Skydio, Inc.

Koninklijke Philips Corporation N.v.

Synopsys, Inc.

Erodr, Inc.

Mark Edward Rubin

Abraham Galton Bachrach

Adam Parker Bry

Matthew Joseph Donahoe

Jack Louis Zhu

Kristen Marie Holtz

Roshan Neel Jobanputra

Jeffrey Robert DeCew

Victor Moroz

Xi-Wei Lin

Andrew Halliday

Drew Duncan Halliday

Techniques are described for developing and using applications and skills with autonomous vehicles. In some embodiments, a development platform is provided that enables access to a developer console for developing software modules for use with autonomous vehicles. For example, a developer can specify instructions for causing an autonomous vehicle to perform one or more operations. To control the behavior of an autonomous vehicle, the instructions can cause an executing computer system at the autonomous vehicle to generate calls to an application programming interface (API) associated with an autonomous navigation system of autonomous vehicle. Such calls to the API can be configured to adjust parameters of a behavioral objective associated with a trajectory generation process performed by the autonomous navigation system that controls the behavior of the autonomous vehicle. The instructions specified by the developer can be packaged as a software module that can be deployed for use at autonomous vehicle.

Applications and skills for an autonomous unmanned aerial vehicle

A technique is described for developing and using applications and skills with an autonomous vehicle. In an example embodiment, a development platform is provided that enables access to a developer console for developing software modules for use with an autonomous vehicle. Using the developer console, a developer user can specify instructions for causing an autonomous vehicle to perform one or more operations. For example, to control the behavior of an autonomous vehicle, the instructions can cause an executing computer system at the autonomous vehicle to generate calls to an application programming interface (API) associated with an autonomous navigation system of autonomous vehicle. Such calls to the API can be configured to adjust a parameter of a behavioral objective associated with a trajectory generation process performed by the autonomous navigation system that controls the behavior of the autonomous vehicle. The instructions specified by the developer can be packaged as a software module that can be deployed for use at autonomous vehicle.

Systems and methods to control the lifetime of social networking posts. The viewable range and/or duration of a post is determined as a function (e.g., Gaussian) of the viewer location/position relative to the post location/position and other factors, such as, local content density power of the poster, net likes, etc. The expiration time of the post at the viewer location/position is extended when content density is low, and reduced when content density is high. Posts are retained for a fixed duration in server; and zone-relevant content is delivered to clients based on local content density. Content from distant cells is highlighted by graphics that distinguish it from local range posts.

Systems and methods to control the lifetime of online posts

A system that generates a layout for a transistor is presented. During operation, the system receives a transistor library which includes operating characteristics of fabricated transistors correlated to transistor gate shapes. The system also receives one or more desired operating characteristics for the transistor. Next, the system determines a transistor gate shape for the transistor based on the transistor library so that a fabricated transistor with the transistor gate shape substantially achieves the one or more desired operating characteristics. The system then generates the layout for the transistor which includes the transistor gate shape.

Method and apparatus for generating a layout for a transistor

In the fabrication of a 0.10 micron CMOS integrated circuit, a high-energy plasma etch is used to pattern a polysilicon layer and an underlying gate oxide layer to define gate structures. A thermal oxide step anneals silicon exposed and damaged by this etch. Instead of using this thermal oxide as a blocking layer for a source/drain extension implant, it is removed so as to expose the silicon surfaces of the source/drain regions. A TEOS deposition results in a carbon-bearing silicon dioxide layer in contact with the surfaces of the crystalline source/drain regions. A boron PMOS source/drain extension implant is performed through this carbon-bearing blocking layer. Subsequent steps result in the formation of sidewall spacers, heavily doped source/drain sections, submetal dielectric, an intermetal dielectric interconnect structure, and passivation. The relatively high interstitial recombination rate of the carbon-bearing blocking layer attracts a flow of interstitial silicon. This flow draws some of the boron extension implant with it&mdash;effectively limiting the depth and lateral extension (under the gate) of the boron. This, in turn, helps limit the short channel effect, and yields a more reliable 0.1 micron PMOS transistor.

Integrated-circuit manufacturing using high interstitial-recombination-rate blocking layer for source/drain extension implant

Growing community of inventors

San Jose, CA, United States of America

Mark Edward Rubin