International Business Machines Corporation

Mark E Lagus

Christopher P Ausschnitt

Timothy A Brunner

Kevin Shawn Petrarca

Richard Paul Volant

Mahadevaiyer Krishnan

James Gardner Ryan

William J Cote

Eric Peter Solecky

Yunsheng Song

Charles Neill Archie

James M Rice

Donald C Wheeler

Diana Nyyssonen, Deceased

Michael P Guse

By Jeffrey Swing, Legal Representative

Monitoring a process sector in a production facility includes establishing a tool defect index associated with a process sector in the production facility. The tool defect index includes a signal representing a defect factor associated with a tool in the process sector. Monitoring the process also requires determining whether the defect factor is a known defect factor or an unknown defect factor, and analyzing a unit from the tool if the defect factor is an unknown defect factor. Monitoring the process further requires identifying at least one defect on the unit from the tool, establishing that the at least one defect is a significant defect, determining cause of the significant defect, and creating an alert indicating that the tool associated with the process sector is producing units having significant defects.

Monitoring a process sector in a production facility

A scanning probe microscope probe is formed by depositing probe material in a mold that has a cavity in a shape and of a size of the desired form of the scanning probe microscope probe that is being fabricated. In the preferred embodiment, the cavity is formed by lithographically defining, in the body of the mold, the shape and the size of the desired scanning probe microscope probe and etching the body of the mold to form the cavity. Prior to depositing the probe material in the cavity in the mold, the cavity is lined with a release layer which, upon activation after the probe has been formed, permits removal of the probe.

Method for fabricating a scanning probe microscope probe

Focus and exposure parameters may be controlled in a lithographic process for manufacturing microelectronics by creating a complementary tone pattern of shapes and spaces in a resist film on a substrate. Corresponding dimensions of the resist shape and space are measured and the adequacy of focus or exposure dose are determined as a function of the measured dimensions. Etching parameters may also be controlled by creating a complementary tone pattern of etched shapes and spaces on a substrate. Corresponding dimensions of the etched shape and space are measured and the adequacy of etching parameters are determined as a function of the measured dimensions.

Etching parameter control system process

A method for monitoring a process in which a feature is formed on a substrate. A plurality of dimensions of the feature are measured using a tool. An edge width of the feature is calculated based on the plurality of dimensions. The edge width is used to determine whether the process is operating within a desired specification. The calculated edge width is compared to a baseline edge width measurement to determine a difference between them. The process is determined to be operating within the specification if the difference is less than a threshold value. If the difference is greater than or equal to the threshold value, the method determines whether the difference is caused by a change in resolution of the tool. A plurality of diagnostic measurements of the edge width may be performed. The tool is adjusted to have a respectively different focus for each respective one of the plurality of diagnostic measurements. The method includes determining that the difference between the calculated edge width and the baseline edge width is caused by a change in resolution of the tool if any one of the plurality of diagnostic measurements of the edge width differs from the baseline edge width by less than the threshold value. The method also includes determining that the process is not operating within the specification, if the difference is greater than or equal to the threshold value, and the difference is not caused by a change in resolution of the tool.

Method and apparatus for critical dimension and tool resolution

Focus or exposure dose parameter control system using tone reversing

Growing community of inventors

Millbrook, NY, United States of America

Mark E Lagus