International Telephone and Telegraph Corporation

Mark E Holycross

Edward J Saccocio

Ashing rates of encapsulants exposed to an oxygen plasma in a reactor are increased by simultaneously exposing a solid halogen-substituted hydrocarbon polymer to a plasma jet formed within a cavity in a grounded conductive surface of the reactor. Advantageously the solid reactant may be polyvinyl chloride or polytetrafluorethylene in solid form.

Method for low temperature ashing in a plasma

Reactor apparatus for use with a gaseous plasma includes a grounded electrode in contact with the plasma. The electrode includes one or more bores in which plasma jets form.

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Columbus, OH, United States of America

Mark E Holycross