Advanced Micro Devices Corporation

Mark E Culp

Matthew S Ryskoski

Jesse C Ramos

Michael J McBride

Pirainder S Lall

Allan T Nelson

William A Whigham

The present invention is generally directed to various advanced process control methodologies for thermal oxidation processes, and various systems for accomplishing same. In one illustrative embodiment, the method comprises measuring an ambient pressure of an environment external to an oxidation chamber, determining a correction factor based upon at least the measured ambient pressure, determining at least one parameter of a thermal oxidation process to be performed in the oxidation chamber based upon the determined correction factor, and performing the thermal oxidation process comprised of the determined parameter on at least one substrate positioned in the oxidation chamber.

Advanced process control of thermal oxidation processes, and systems for accomplishing same

A method and apparatus for reducing byproduct induced defects in a processing tool is provided. A purge gas is introduced into a vessel of the processing tool. The vessel is heated to a temperature above a vaporization temperature of the byproduct. The temperature is maintained for a predetermined period of time. The vessel is purged to remove at least a portion of the byproduct.

Method and apparatus for controlling byproduct induced defect density

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Austin, TX, United States of America

Mark E Culp