Qualcomm Incorporated

Silanna Semiconductor U.s.a., Inc.

Qualcomm Switch Corp.

Mark Drucker

Michael Andrew Stuber

Stuart B Molin

Peter Fowler

A semiconductor structure is formed with first and second semiconductor wafers and a redistribution layer. The first semiconductor wafer is formed with a first active layer and a first interconnect layer. The second semiconductor wafer is formed with a second active layer and a second interconnect layer. The second semiconductor wafer is inverted and bonded to the first semiconductor wafer, and a substrate is removed from the second semiconductor wafer. The redistribution layer redistributes electrical connective pad locations on a side of the second semiconductor wafer. The redistribution layer also electrically contacts the first interconnect layer through a hole in the second active layer and the second interconnect layer.

Redistribution layer contacting first wafer through second wafer

A first wafer is provided that includes an insulating layer, a first active layer, and a handle layer. The insulating layer has a first surface and a second surface. The first active layer contacts the first surface of the insulating layer. The handle layer contacts the second surface of the insulating layer. A second wafer is provided that includes a substrate and a second active layer. The substrate has a first surface and a second surface. The second active layer contacts the first surface of the substrate. The second wafer is bonded to the first wafer by physically connecting the first active layer to the second surface of the substrate. The handle layer is removed. A metal bond pad is formed on the second surface of the insulating layer. The metal bond pad is electrically connected to the first active layer.

Integrated circuit assembly and method of making

An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface, where the first surface of the insulating layer is less than 10 microns below an upper plane of the integrated circuit assembly. An active layer contacts the first surface of the insulating layer. A metal bond pad is electrically connected to the active layer and formed on the second surface of the insulating layer, and is also electrically connected to a printed circuit board.

Thin integrated circuit chip-on-board assembly

An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface, where the first surface of the insulating layer is less than 10 microns below an upper plane of the integrated circuit assembly. An active layer contacts the first surface of the insulating layer. A metal bond pad is electrically connected to the active layer and formed on the second surface of the insulating layer, and is also electrically connected to a printed circuit board. A method of fabricating an integrated circuit assembly includes coupling a handle wafer to the active layer of a semiconductor-on-insulator wafer, removing the substrate of the semiconductor-on-insulator, forming a bond pad connecting to the active layer on the exposed insulator surface, bonding the bond pad to a printed circuit board using a solder bump, and removing the handle wafer.

Thin integrated circuit chip-on-board assembly and method of making

An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface. A first active layer contacts the first surface of the insulating layer. A metal bond pad is electrically connected to the first active layer and formed on the second surface of the insulating layer. A substrate having a first surface and a second surface, with a second active layer formed in the first surface, is provided such that the first active layer is coupled to the second surface of the substrate.

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Poway, CA, United States of America

Mark Drucker