Nxp B.v.

Mark De Keijser

Johannes Donkers

Stephan Heil

Hans Broekman

Cecilia Van Der Schaar

Disclosed is a semiconductor device comprising at least one active layer () on a substrate () and a first contact () to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer () on the metal. A method of manufacturing such a semiconductor device is also disclosed.

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Millingen aan de Rijn, Netherlands

Mark De Keijser