International Business Machines Corporation

Globalfoundries Inc.

Smartsens Technology (cayman) Co., Limited

Eastman-kodak Company

Omnivision Technologies, Inc.

Globalfoundries Singapore Pte. Ltd.

Globalfoundries U.S. 2 LLC

Elpis Technologies Inc.

Mark David Jaffe

Jeffrey P Gambino

Anthony K Stamper

James William Adkisson

John J Ellis-Monaghan

Richard John Rassel

Randy Lee Wolf

Alvin Jose Joseph

Robert K Leidy

Steven M Shank

Kirk David Peterson

Timothy Joseph Dalton

Andres Bryant

Kerry Bernstein

Stephen Ellinwood Luce

Edmund Juris Sprogis

Paul David Kartschoke

Alain F Loiseau

Alan Bernard Botula

Jed Hickory Rankin

Qizhi Liu

Jeffrey Bowman Johnson

James Albert Slinkman

Jerome Brett Lasky

Richard A Phelps

Brent A Anderson

Zhong-Xiang He

John Joseph Pekarik

Mark Alan Lavin

Eric Jeffrey White

Daniel Nelson Maynard

Edward J Nowak

Mukta G Farooq

Timothy Harrison Daubenspeck

Wolfgang Sauter

Christopher David Muzzy

John Anthony Fitzsimmons

William F Clark, Jr

Christopher Stephen Putnam

Michel J Abou-Khalil

David Michael Fried

Vibhor Jain

Hanyi Ding

Robert Mark Rassel

John Maxwell Cohn

Robert Michael Guidash

Thomas J Dunbar

Panglijen Candra

Richard L Rassel

Charles S Musante

John Anthony Bracchitta

Gerd Pfeiffer

Dale J Pearson

Dennis L Rogers

Edward W Sengle

Dale Warner Martin

Leah M P Pastel

Edward T Nelson

Brett T Cucci

R Michael Guidash

Charles V Stancampiano

Jeffrey E Hanrahan

William Joseph Murphy

Renata A Camillo-Castillo

Jeffrey C Maling

David P Vallett

Bradley Alan Orner

Leendert M Huisman

Russell T Herrin

Thomas Gregory Sopchak

Robert L Barry

Phillip Francis Chapman

Phillip J Nigh

Matthew Sean Grady

John Chester Malinowski

Rui Tze Toh

Kevin N Ogg

Anthony J Perri

Tian Xia

Mark D Levy

Stephen A Mongeon

Michael Lawrence Gautsch

Yen L Lim

Blaine Jeffrey Gross

Greg Bazan

Laura J Schutz

Kristin M Ackerson

Arthur Paul Johnson

Fangyue Liu

Sambasivan Narayan

David E Sweenor

Thomas Joseph Dalton

Kenneth F McAvey

Alain Loiseau

Alain Lolseau

Alan Loiseau

Jeffrey Peter Gambino

Anthony Kendall c/o Ibm United Kingdom Limited Intellectual Property Law Stamper

The present disclosure relates to semiconductor structures and, more particularly, to under-body source contact structures and methods of manufacture. The structure includes: a gate structure on a semiconductor layer; a drift region within the semiconductor layer, below the gate structure; a body region within the semiconductor layer, below the gate structure; a contact region within the body region, the contact region being devoid of a silicide contact; and a silicide contact remote from the contact region within the semiconductor layer.

Under-source body contact

Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

Photodiode structures

A method for fabricating a backside contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. The method includes forming a first switch and a second switch in the device layer. A trench that extends through the device layer and partially through the buried insulator layer is formed. An electrically-conducting connection is formed in the trench.

Backside contact to a final substrate

Methods and structures for shielding optical waveguides are provided. A method includes forming a first optical waveguide core and forming a second optical waveguide core adjacent to the first optical waveguide core. The method also includes forming an insulator layer over the first optical waveguide core and the second optical waveguide core. The method further includes forming a shielding structure in the insulator layer between the first optical waveguide core and the second optical waveguide core.

Shielding structures between optical waveguides

A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.

Semiconductor structure with airgap

A device structure is formed using a silicon-on-insulator substrate. The device structure includes a first switch and a second switch that are formed within a device layer of the silicon-on-insulator substrate and between a buried insulator layer of the silicon on-insulator substrate and a dielectric layer disposed above and coupled to the device layer. An electrically-conducting connection is located in a first trench extending from the device layer through the buried insulator layer to a trap-rich layer such that the electrically-conducting connection is coupled with a substrate.

A device structure with a backside contact includes a silicon-on-insulator substrate including a device layer, a buried insulator layer, and an electrically-conducting connection in a trench. A final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate.

A method for fabricating a backside contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. The method includes forming an electrically-conducting connection in a trench. The handle wafer is removed. After the handle wafer is removed, the buried insulator layer is partially removed to expose the electrically-conducting connection. After the buried insulator layer is partially removed, a final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate.

A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device.

Backside integration of RF filters for RF front end modules and design structure

A method for fabricating a backside contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. The method includes forming a first switch and a second switch in the device layer. An electrically-conducting connection is formed in a trench. The handle wafer is removed. After the handle wafer is removed, the buried insulator layer is partially removed to expose the electrically-conducting connection. After the buried insulator layer is partially removed, a final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate.

Growing community of inventors

Shelburne, VT, United States of America

Mark David Jaffe