Semiconductor Components Industries, LLC

Mark Curtice

Clifford Drowley

Subhash Srinivas Pidaparthi

Andrew P Edwards

David DeMuynck

Sharlene Wilson

Karthik Suresh Arulalan

A method of forming alignment marks, each alignment mark including a plurality of fiducials, includes providing a III-V compound substrate having a device region and an alignment mark region. The method also includes forming a first hardmask in the device region and a hardmask structure in the alignment mark region, etching a first surface portion of the III-V compound substrate to form a plurality of trenches in the device region, and epitaxially regrowing a semiconductor layer in the trenches. The method further includes forming a second mask in the device region and a patterned structure in the alignment mark region. The patterned structure includes a set of masked regions corresponding to the plurality of fiducials and a second set of openings. The method also includes forming the plurality of fiducials.

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Santa Clara, CA, United States of America

Mark Curtice