Nxp B.v.

Mark C J C M Kramer

Johannes J T M Donkers

Guillaume Boccardi

Philippe Meunier-Beillard

Stefaan Decoutere

Stefaan Van Huylenbroeck

Li Jen Choi

Arturo Sibaja-Hernandez

Rafael Venegas

The invention relates to a semiconductor device () comprising a substrate (), a semiconductor body () comprising a bipolar transistor that comprises a collector region (), a base region (), and an emitter region (), wherein at least a portion of the collector region () is surrounded by a first isolation region (), the semiconductor body () further comprises an extrinsic base region () arranged in contacting manner to the base region (). In this way, a fast semiconductor device with reduced impact of parasitic components is obtained.

Gringo heterojunction bipolar transistor with a metal extrinsic base region

A semiconductor device () comprising a bipolar transistor and a field effect transistor within a semiconductor body () comprising a projecting mesa () within which are at least a portion of a collector region (and) and a base region () of the bipolar transistor. The bipolar transistor is provided with a first insulating cavity () provided in the collector region (and). The base region () is narrower in the plane of the substrate than the collector region (and) due to a second insulating cavity () provided around the base region () and between the collector region (and) and the emitter region (). By blocking diffusion from the base region the first insulating cavity () provides a reduction in the base collector capacitance and can be described as defining the base contact.

Semiconductor device and method of manufacture thereof

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Sittard, Netherlands

Mark C J C M Kramer