United States of America As Represented by the Secretary of the Air Force

Mark C Calcatera

Randy J Richards

Richard E Strawser

Christopher D Lesniak

Bradley J Paul

Chern I Huang

James C Hwang

Dennis L May

Lois T Kehias

Keith A Stamper

Ce-Jun Wei

A micromechanical electrical systems (MEMS) metallic micromachined multiple ported electrical switch receivable on the die of an integrated circuit and within the integrated circuit package for controlling radio frequency signal paths among a plurality of switch-enabled different path choices. The switch provides desirably small signal losses in both the switch open and switch closed conditions. The switch is primarily of the single pole multiple throw mechanical type with possible use as a single input pole, multiple output poles device and provision for grounding open nodes in the interest of limiting capacitance coupling across the switch in its open condition. Cantilever beam switch element suspension is included along with normally open and normally closed switch embodiments, electrostatic switch actuation and signal coupling through the closed switch by way of increased inter electrode capacitance coupling. Switch operation from direct current to a frequency above ten gigahertz is accommodated.

Shunted multiple throw MEMS RF switch

A weaker signal receiving system inclusive of stronger nearby-sourced interference signal cancellation capability. Stronger interference signal cancellation is accomplished by actively canceling or subtracting from the received signal an intermediate signal in which the weaker signal has been attenuated but the stronger signal remains. Attenuation of the weaker signal in this intermediate signal is accomplished in a feedback loop arrangement by an amplitude-responsive signal processing element embodied from for example a ferrite material such as yttrium iron garnet disposed in a physical wave propagating and wave amplitude sensitive film. The cancellation or subtracting is accomplished using received signals and without need for a direct output sample of the stronger signal at its source. Military aircraft use of the disclosed system in the microwave and other spectral regions with transmission mode as opposed to reflection mode signal amplitude discrimination by the ferrite device is included.

Close proximity transmitter interference limiting

A micromechanical electrical systems (MEMS) metallic micromachined electrical switch usable on the die of an integrated circuit and inside the integrated circuit package for controlling radio frequency signal paths while incurring desirably small signal losses. The switch is of the single pole single throw mechanical type with provision for grounding one open-switch position node in the interest of limiting capacitance coupling across the switch in its open condition. Cantilever beam switch element suspension is included along with normally open and normally closed switch embodiments, electrostatic switch actuation and signal coupling through the closed switch by way of capacitance coupling. Low loss radio frequency operation above one gigahertz in frequency is provided.

Series and shunt mems RF switch

A method for forming a transmission line arrangement providing control of signal losses through the use of conductor cross-sectional surface area-increasing and skin effect-considered bulbous additions to the rectangular conductor cross-sectional shape frequently used in semiconductor device transmission line conductors. The achieved transmission line is especially suited for use in radio frequency integrated circuit assemblies where it also includes a backplane member, encounters signals in the microwave and millimeter wavelength range and involves conductor dimensions measured in micrometers. Control of transmission line characteristic impedance at, for example, 50 ohms is disclosed as is use of semiconductor device-compatible materials and loss comparisons data.

Cylindrical edged microstrip transmission line and method

A microwave integrated circuit internal-node waveform probing arrangement using a portable ungrounded voltage sensing probe and a commercially available transition analyzer instrument are disclosed. Harmonic frequency and phase processing are accomplished on the probe sensed voltage waveforms from internal nodes of for example a C-band monolithic microwave integrated circuit (MMIC) power amplifier circuit device. The disclosed probing is applied to determining signal voltage and signal current flow waveforms for the MMIC device. Examples relating to use of the invention to analyze operation of microwave circuits and prevent premature device failures are included; these include variation of waveforms as a function of frequency, drive and measurement location in a device. The potential impact of the disclosed technique includes MMIC design verification, in-situ device model extraction, process diagnosis, and reliability assessment.

Signal probing of microwave integrated circuit internal nodes

A transmission line arrangement providing control of signal losses through the use of conductor cross-sectional surface area-increasing and skin effect-considered bulbous additions to the rectangular conductor cross-sectional shape frequently used in semiconductor device transmission line conductors. The achieved transmission line is especially suited for use in radio frequency integrated circuit assemblies where it also includes a backplane member, encounters signals in the microwave and millimeter wavelength range and involves conductor dimensions measured in micrometers. Control of transmission line characteristic impedance at, for example, 50 ohms is disclosed as is use of semiconductor device-compatible materials and loss comparisons data.

Cylindrical edge microstrip transmission line

A small sized energy conveying and signal dissipating loading apparatus for use in the testing of a transistor of the high gain high frequency type is disclosed. The energy conveying and loading device of the invention employs a transmission line-like network of distributed components in order to roll off and dampen or dissipate the high frequency alternating current response of the transistor under test while also being electrically invisible for measuring the low frequency or DC characteristics of the transistor under test. The described energy communicating and loading apparatus is compatible with the temperatures of a test environment for even the most extreme environment transistor devices and allows convenient placement in the test environment immediately adjacent the transistor under test. The load allows testing of multiple transistor devices with reasonable space and cost requirements. Use of the energy communicating and loading invention with a hetrojunction bipolar transistor of the microwave type and in conjunction with discrete bypass capacitors are also disclosed.

DC biasing and AC loading of high gain frequency transistors

A buried source and drain microwave field effect transistor which provides reduced current density and reduced electric field intensity near the transistor's surface region is disclosed. Operating life and reliability of the transistor are improved by the buried source and drain structure which locates necessary regions of high electrical field intensity and large current density well within the body of the transistor. Comparisons of the buried source and drain field effect transistor with the conventional metal semiconductor field effect transistor are disclosed and include current density, electric field intensity, voltage potentials and I-V curve comparisons. A salient steps fabrication sequence for the buried source and drain field effect transistor is also disclosed.

Limited current density field effect transistor with buried source and

A field emitting drain field effect transistor FEDFET device which combines the desirable frequency response and current control characteristics of a field effect transistor (or other transistor) with the higher voltage higher power level characteristics of a field emission triode vacuum tube device to provide characteristics improved over those of either component element. The combination device is physically as well as electrically integrated in a semiconductor like structure. Equivalent circuit and frequency response characteristics are disclosed.

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Spring Valley, OH, United States of America

Mark C Calcatera