Other

USA as Represented by Secretary of the Navy

Seagate Technology Incorporated

Spinop Corporation

Nonvologic LLC

Korea Institute of Science and Technology

University of Alberta

Seagate Technology International

Seagate Technology Int'l

Mark B Johnson

Michael P Miller

Brian R Bennett

Charles Changging Chen

Weilu Hang Xu

Abebe Hailu

Shoutao Wang

Xiaoguang Ma

Gary A Prinz

Abdulhakem Elezzabi

Chunghee Chang

Kenneth J Chau

Thomas W Clinton

Joon Yeon Chang

Chung-hee Chang

James S Horwitz

Michael S Osofsky

Jin Dong Song

Raymond Auyeung

Michael M Miller

Jin Ki Hong

Robert J Soulen, Jr

Christopher Malec

Philip R Hammar

Doug B Chrisey

Bill Stapor

An electronic environmental sensor tag includes microsensor elements using magnetic logic devices adapted to detect target chemical and/or target environmental conditions. The microsensor elements operate only periodically to save power, and also include non-volatile memories and communications circuits to allow interrogation and detection of a target condition. The microsensor element state is detected and then processed to identify a detected value for the target chemical. The detected value can be communicated by an antenna element to a separate reader device.

Magnetoelectronic based environmental sensor tag

A coated article includes integrated circuit detection elements incorporated on a surface or embedded in a body, which elements are adapted to detect target chemical and/or target environmental conditions. The detection elements include microsensors applied with liquid and dry mixtures, including compounds of inks, dyes, print powders, aerosols and other suspensions. The microsensor state is detected and then processed to identify a detected value for the target chemical. Depending on the result, a readout substance is released to indicate a presence of the target chemical.

Article coated with integrated microsensor chemical detection elements

A chemical detection mixture includes microsensor elements adapted to detect target chemical and/or target environmental conditions. The microsensor elements can be incorporated within liquid and dry mixtures, including compounds of inks, dyes, print powders, aerosols and other suspensions. The microsensor element state is detected and then processed to identify a detected value for the target chemical. Depending on the result, a readout substance is released to indicate a presence of the target chemical.

Chemical detection mixture with integrated circuit microsensor elements

A chemical detection system on an integrated circuit includes microsensor elements adapted to detect target chemical and/or target environmental conditions. The chemical detection system generally includes carbon nanotubes as the microsensor elements, magnetoelectronic processing components for interpreting the CNT state, non-volatile memory for storing the detection state, and a combination of readout options, including transmitting antennas and micromechanical structures for controlling an expression of a readout substance.

Integrated circuit based microsensor chemical detection system and elements

A process is disclosed for using microsensors elements embedded in or on articles for detecting target chemical and/or target environmental conditions of interest, including materials hazardous to human health and/or associated with illegal activity. The microsensor elements can be fabricated on a single semiconductor chip, and can be made indetectable to facilitate secure surveillance of potentially illegal activities.

Microsensor detection process

Resistance elements, including Magnetic Tunnel Junction devices are configured as magnetoelectronic (ME) devices. These resistive devices are useable as circuit building blocks in reconfigurable processing systems, including as logic circuits, non-volatile switches and memory cells.

Magnetic tunnel junction based logic circuits

Magnetic tunnel junction based reconfigurable processing system and components

Hybrid Hall Effect Devices implemented with Spin Transfer Torque write capability are configured as magnetoelectronic (ME) devices. These devices are useable as circuit building blocks in reconfigurable processing systems, including as logic circuits, non-volatile switches and memory cells.

Hybrid hall effect magnetoelectronic gate

Magnetoelectronic circuits include Hybrid Hall Effect devices implemented with Spin Transfer Torque write capability. The circuits include reconfigurable processing systems, logic circuits, non-volatile switches, memory cells, etc.

Reconfigurable magnetoelectronic processing circuits

Magnetoelectronic (ME) logic circuits and methods of operating the same are disclosed for use in energy constrained applications in which logic operations are carried out using a minimal number of physical operations. Microsystems of different circuits made from different types of ME devices can be constructed and employed in applications such as sensors, smart dust, etc. including in clockless applications.

Reconfigurable magnetoelectronic processing system

A non-volatile reconfigurable logic device executing logical operations and a memory function and controlled by a magnetic field is provided. The reconfigurable logic device includes i) at least one semiconductor device; and ii) a pair of magnetic field controlled devices respectively spaced apart from both sides of the semiconductor device and that are adapted to generate magnetic field leakage to control the semiconductor device. The semiconductor device includes i) a first semiconductor layer; and ii) a second semiconductor layer located on the first semiconductor layer. One of the first semiconductor layer and the second semiconductor layer is a p-type semiconductor layer and the other is an n-type semiconductor layer.

Magnetic field controlled reconfigurable semiconductor logic device and method for controlling the same

A hybrid domain wall Hall cross device consists of a semiconductor Hall cross having a top surface and a pair of arms intersecting at a center region, and a ferromagnetic wire fabricated on the top surface, electrically isolated from the Hall cross, and having a constriction proximate to the center of the Hall cross. The device provides a magnetoelectronic MRAM storage cell with improved performance characteristics. Binary storage is associated with a trapped domain wall having one of two stable orientations. The bit state can be written using current driven domain wall motion. This is a STT process in which the write current is applied to a thin film, low impedance wire. Heating is minimized and no wear-out mechanism is known to exist.

Hybrid domain wall-hall cross device

An apparatus and method are provided for improving perpendicular magnetic recording media. The present invention provides media, and a method of fabricating media in a cost-effective manner, with a reduced ruthenium (Ru) content interlayer structure, while meeting media performance requirements. A perpendicular magnetic recording medium is provided comprising a non-magnetic substrate having a surface, and a layer stack situated on the substrate surface. The layer stack comprises, in overlying sequence from the substrate surface a magnetically soft underlayer; an amorphous or crystalline, non-magnetic seed layer; an interlayer structure for crystallographically orienting a layer of a perpendicular magnetic recording material situated on the underlayer; and at least one crystallographically oriented, magnetically hard, perpendicular magnetic recording layer situated on the interlayer structure. The interlayer structure is a stacked structure comprising, in overlying sequence: a chromium alloy situated on the seed layer; and an upper interlayer situated on the chromium alloy.

Interlayer comprising chromium-containing alloy

Magnetoelectronic (ME) logic circuits and methods of operating the same are disclosed. Microsystems of different circuits made from different types of ME devices can be constructed and employed in applications such as sensors, smart dust, etc.

Growing community of inventors

Potomac, MD, United States of America

Mark B Johnson