General Electric Company

United States of America As Represented by the Secretary of the Air Force

Mark B Barron

Walter J Butler

Bruno F Kurz, Deceased

By Elizabeth Kurz-Beerli, Executrix, Also Known As Elisabeth H Kurz

The novel structure disclosed comprises an n-type epitaxial layer on a p.sup.- type substrate with p.sup.+ type top gates diffused into the epi-layer and p.sup.+ buried gates aligned with the source side of the top gates. The top-gate diffusion extends far into the drain region.

Junction-storage JFET bucket-brigade structure

An MOS bucket brigade delay line having reduced parasitic capacitances include a first set of diffused drain source regions in a semiconductor substrate, a thin gate oxide layer overlying said diffused regions, a plurality of gate electrodes having first and second edges, the first edge of each electrode substantially overlapping one of said diffused regions, each of these elements formed in conventional manner. A second set of diffused drain-source regions extends the first set of regions by an amount limited by the second edge of the gate electrodes. The second set of drain source regions is formed by utilizing the gate electrodes as a diffusion mask.

Bucket-brigade delay line having reduced parasitic capacitances

An MOS bucket brigade delay line having reduced parasitic capacitances and method for making the same, include a first set of diffused drain source regions in a semiconductor substrate, a thin gate oxide layer overlying said diffused regions, a plurality of gate electrodes having first and second edges, the first edge of each electrode substantially overlapping one of said diffused regions, each of these elements formed in conventional manner. A second set of diffused drain-source regions extends the first set of regions by an amount limited by the second edge of the gate electrodes. The second set of drain source regions is formed by utilizing the gate electrodes as a diffusion mask.

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Camillus, NY, United States of America

Mark B Barron