Vlsi Technology, Inc.

Mark Arnold Levan

Ramiro Solis

A method for enhancing sidewall polymer removal. In one embodiment of the present invention, O.sub.2 is introduced into an ashing environment at a flow rate of approximately 800 standard cubic centimeters per minute (SCCM). In the present embodiment, CF.sub.4 is also introduced into the ashing environment. The CF.sub.4 is introduced at a flow rate of approximately 80 SCCM. The ashing environment also has H.sub.2 O vapor introduced therein. In the present embodiment, the H.sub.2 O vapor is introduced into the ashing environment at a flow rate of approximately 80 SCCM. The ashing environment is used to selectively etch sidewall polymer material, thereby providing a method for removing sidewall polymer material without detrimentally etching other materials.

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San Antonio, TX, United States of America

Mark Arnold Levan