Nokia Technologies Oy

Emberion Oy

Provenance Asset Group LLC

Mark Allen

Darryl Cotton

Piers Andrew

Chris Bower

Alexander Bessonov

Richard White

Michael Robert Astley

Yinglin Liu

Zoran Radivojevic

Di Wei

Sami Kallioinen

David Bitauld

Martti Voutilainen

Alan Colli

Tapani Ryhänen

Paul Beecher

Markku Rouvala

Adam Robinson

Elisabetta Spigone

Pekka Korpinen

Troels Ronnow

Surama Malik

Nadine Harris

Christopher Bower

Marc James Ashton Bailey

Ilkka Niemela

Aqib Ejaz

Joseph Bottomley

A photodetector which comprises a measurement layer () and at least a first photoactive layer () which covers the measurement layer (). The measurement layer () may be a transistor channel or a charge accumulation electrode. The conductivity type of the measurement layer is n-type, p-type or ambipolar and the first photoactive layer () exhibits intrinsic semiconductivity.

P-i-n photodetector

An apparatus including an array of field-effect transistors, each field-effect transistor including a channel, source and drain electrodes, and a gate electrode configured to enable the flow of electrical current to be varied, the gate electrode separated from the channel by a dielectric material configured to inhibit a flow of electrical current between the channel and gate electrode, wherein the gate electrode of each field-effect transistor is connected in parallel to the gate electrodes of the other field-effect transistors in the array, and wherein a respective two-terminal current-limiting component is coupled to each gate electrode such that, in the event that a defect in the dielectric material of a particular field-effect transistor allows a leakage current to flow between the channel and gate electrode of that field-effect transistor, the respective two-terminal current-limiting component limits the magnitude of the leakage current.

Array apparatus and associated methods

An apparatus, method and computer program wherein the apparatus comprises:a plurality of quantum dot-graphene field effect transistors; circuitry configured to provide an individual drain-source bias voltage to each of a plurality of quantum dot-graphene field effect transistors, wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; and circuitry configured to obtain output signals from each of a plurality of quantum dot-graphene field effect transistors where the output signal is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage to enable the obtained output signals to be used as a scrambled identification signal of the user of the apparatus.

Apparatus, method and computer program for scrambling an identification signal using quantum dot-graphene field effect transistors

An apparatus including a proton battery and a casing for the proton battery, the proton battery including first and second electrodes configured to form an electrode junction configured to generate protons in the presence of water to produce a potential difference, the proton battery further including respective charge collectors in contact with the first and second electrodes; the casing configured to inhibit exposure of the electrode junction to water from the surrounding environment when the proton battery is contained within the casing, the casing including a pair of electrical terminals electrically connected to the respective charge collectors of the proton battery, wherein the proton battery is formed as a continuous strip of material, and wherein the casing includes an opening configured to enable a length of the continuous strip to be extracted from the casing.

Apparatus and associated methods for electrical storage

A photosensitive transistor or voltage-mode device which comprises a gate electrode, a layer of ambipolar two-dimensional material such as graphene and a layer of photoactive semiconducting material forms a junction with the ambipolar two-dimensional material. The photoactive semiconducting material and the ambipolar two-dimensional material are configured so that there is a non-screening gate voltage interval where an interface voltage at the junction between the photoactive semiconducting layer and the ambipolar two-dimensional material can be changed by applying to the gate electrode a gate voltage which falls within the non-screening gate voltage interval. The non-screening gate voltage interval comprises a flat-band gate voltage at which the interface voltage is zero. An electrical shutter can be operated at this gate voltage.

Photosensitive device with electric shutter

An apparatus comprises a transparent substrate (), at least one sensor () for the detection of electromagnetic radiation (), and for each sensor a corresponding mirror having a reflective surface (). The reflective surface () is shaped so that electro-magnetic radiation () incident on the transparent substrate () at a specific angle, passing through the transparent substrate () and being reflected by the reflective surface () is directed towards the sensor (). The sensor () comprises a two dimensional material like graphene and may be a quantum dot functionalised graphene field effect transistor. The present invention enables the incident electromagnetic radiation () to be focussed onto the at least one sensor () without the use of additional optical components like lenses or microlenses. This may enable focussed images to be obtained by the apparatus.

Apparatus for sensing electromagnetic radiation incident substantially perpendicular to the surface of a substrate

An apparatus comprising a processor and memory including computer program code, the memory and computer program code configured to, with the processor, enable the apparatus at least to: based on a predetermined dark current component for each photodetector in an array of photodetectors, identify a plurality of subsets of photodetectors from the array for signal readout and amplification by a readout circuit, each photodetector of the array configured to provide a photodetector output signal comprising the dark current component and an image component on exposure to incident electromagnetic radiation from a target scene, wherein each subset of photodetectors is identified such that the combined dark current component of the constituent photodetector output signals for each subset is substantially the same; and provide the identified plurality of subsets for use in signal readout and amplification by the readout circuit.

An apparatus and method and electronic device, the apparatus comprising: a memory element configured to store information; a switching element coupled to the memory element; wherein the switching element is configured to be switched from a first state to a second state in response to an input signal provided by a capacitive touch screen and wherein when the switching element is in the second state the information can be read from the memory element by the capacitive touch screen.

Apparatus, methods and computer programs for enabling information to be read from an apparatus

A photosensitive device that includes a conductive electrode, a dielectric layer, a sensing electrode composed of a two-dimensional layered material, and a photoactive layer which can be configured to absorb electromagnetic radiation. The photosensitive device also includes a single-ended measurement electrode for determining the electric potential of the sensing electrode.

Voltage-mode photosensitive device

A method and apparatus, the method comprising: transferring a layer of two dimensional material from a liquid surface onto a layer of woven electronic fabric; wherein the woven electronic fabric comprises a plurality of conductive strands and a plurality of non conductive strands such that the layer of two dimensional material and woven electronic fabric form a sensor.

Apparatus and method of forming an apparatus comprising two dimensional material

An apparatus and method, the apparatus comprising: at least one electrode configured to provide an electrical connection to a channel of two dimensional material wherein the electrode comprises a conductive layer and plurality of nanostructures wherein at least some of the nanostructures comprise a conductive core and a coating of two dimensional material.

Apparatus comprising two dimensional material

An apparatus comprising: a module; a substrate; and electrolyte between the module and the substrate, wherein an electronic component is formed between the module and the substrate and wherein the electrolyte is configured to function as the electrolyte in the electronic component and also as the adhesive to attach the module to the substrate.

Modular electronics apparatuses and methods

An apparatus comprising: a plurality of sensors () arranged in an array (), each sensor having a source electrode (), a drain electrode (), a gate electrode () and a channel, wherein the source electrode and drain electrode are elongate and the channel has a channel width defined by the longitudinal extent of the source and/or drain electrode and a channel length defined by the separation between the source and drain electrodes; a common conductive or semiconductive layer (), which may be made of graphene, comprising the channels of the sensors () and arranged to extend over the plurality of sensors of the array and configured to be in electrical contact with at least the source electrode and the drain electrode of each sensor; and wherein the source electrode or drain electrode of each sensor forms a substantially continuous sensor perimeter at least along the channel width, which substantially encloses the other electrode of each sensor to inhibit the flow of charge carriers beyond the sensor perimeter to inhibit crosstalk between sensors in the array.

Apparatus comprising a sensor arrangement and associated fabrication methods

A photosensitive field-effect transistor configured to provide an electrical response when illuminated by electromagnetic radiation incident on the transistor. The photosensitive field-effect transistor comprises a layer of two-dimensional material which forms a horizontal transistor channel configured to transport current, and a horizontal semiconducting layer in contact with the transistor channel. The semiconducting layer comprises two or more assemblies of semiconducting material. If the two-dimensional material in the transistor channel has a high work function, the assemblies of semiconducting material are vertically stacked on the transistor channel in order of decreasing work function. If the two-dimensional material in the transistor channel has a low work function, the assemblies of semiconducting material are vertically stacked on the transistor channel in order of increasing work function. The semiconducting materials may, for example, comprise semiconductor nanocrystals, quantum dots or thin-film semiconducting layers.

Photosensitive field-effect transistor

An apparatus comprises a layer of channel material, source and drain electrodes configured to enable a flow of electrical current through the channel material, and a layer of quantum dot material configured to generate electron-hole pairs on exposure to electromagnetic radiation to produce a detectable change in the electrical current indicative of one or more of the presence and magnitude of the electromagnetic radiation. The layer of quantum dot material is positioned between the channel material and a layer of conductive material. The layers of channel and conductive material have work functions such that respective built-in electric fields are created at the interfaces between the layer of quantum dot material and the channel and conductive material. The electric field at each interface acts in the same direction to promote separation of the electrons and holes of the electron-hole pairs to facilitate production of the detectable change in electrical current.

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Great Cambourne, United Kingdom

Mark Allen