International Business Machines Corporation

Mark A Takacs

Steven M Kandetzke

Constance J Araps

Lawrence D David

Lovell B Wiggins

Rebecca Yung Gorrell

Kenneth J Travis, Jr

John Ulrich Knickerbocker

Jon Alfred Casey

Sarah Huffsmith Knickerbocker

James N Humenik

Srinivasa S Reddy

Robert W Nufer

John Acocella

George Czornyj

Renuka S Divakaruni

Richard A Bates

Arnold I Baise

David R Clarke

Daniel P Kirby

Amy T Matts

Charles Hampton Perry

Hormazdyar M Dalal

Jun Li Wang

Harbans S Sachdev

Gene J Gaudenzi

Ajay Prabhakar Giri

Richard B Booth

Herbert R Anderson, Jr

Anthony Mastreani

Mark O Neisser

Peter A Agostino

Liang-Choo Hsia

Salvatore J Scilla

Ray M Bryant

Werner E Dunkel

Allen J Dam

Bruce Anthony Copeland

George R Goth

Ellen L Kutner

Nancy R Cservak

Susan K Fribley

Peter O Ulanmo

Donald W Scheider

A method of forming a lead-free solder alloy on an electronic substrate. In the method, a metal stack which includes a thick nickel barrier layer and an outer copper layer is then evaporated or plated with silver and tin. Upon heating to an appropriate temperature, the copper, tin and silver form a lead-free tin, silver, copper solder.

Method of forming a lead-free tin-silver-copper based solder alloy on an electronic substrate

A corrosion resistant electrode structure for interconnecting a decoupling capacitor to a substrate is disclosed. In an exemplary embodiment of the invention, the electrode structure includes a first chromium layer formed upon the capacitor and a first nickel layer formed upon the first chromium layer. A noble metal conductive layer is then formed upon the first nickel layer and a second nickel layer is formed upon said noble metal conductive layer. The second nickel layer has a thickness which is greater than a thickness of the first nickel layer. A second chromium layer is then formed upon the nickel layer.

Corrosion-resistant electrode structure for integrated circuit decoupling capacitors

A capacitor having a multilevel interconnection technology and process thereof. Also disclosed is a process of electrically connecting a capacitor to an object, comprising the steps of first obtaining a capacitor. At least one solder ball is reflowed and secured onto the capacitor. The solder ball is in electrical communication with the capacitor through a contacting means. On this reflowed solder ball a cap of low melting point metal is secured. This can be done in a number of ways. The preferred way is to positioning a mask over the solder ball such that a portion of the solder ball is exposed through openings in the mask. At least one layer of a low melting point metal is deposited on the exposed surface of the solder ball through the mask, and thereby forming a capacitor with a multilevel interconnect cap. The low melting point metal can interact with the surface of the solder ball to form a cap of an eutectic or a liquefied portion. The cap portion can then be joined to the object.

Process of forming a capacitor with multi-level interconnection technology

This invention is directed to a capacitor having a multilevel interconnection technology. At least one solder ball is reflowed and secured onto the capacitor. The solder ball is in electrical communication with the capacitor through a contact. On this reflowed solder ball a cap of low melting point metal is secured. This can be done in a number of ways. The preferred way is to positioning a mask over the solder ball such that a portion of the solder ball is exposed through openings in the mask. At least one layer of a low melting point metal is deposited on the exposed surface of the solder ball through the mask, and thereby forming a capacitor with a multilevel interconnect cap. The low melting point metal can interact with the surface of the solder ball to form a cap of an eutectic or a liquefied portion. The cap portion can then be joined to the object.

Capacitor with multi-level interconnection technology

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

Process for fabricating a low dielectric composite substrate

A process for making a compliant thermally conductive, preferably dielectric, compound that enhances the power dissipation capability of high-powered electrical components such as bipolar VLSI semiconductor chips. The compound has chemically stable thermal conduction and viscosity properties; is not subject to phase separation during use and may be applied in small gaps to maximize thermal conduction. The compound preferably comprises a liquid carrier having thermal filler particles dispersed therein and a coupling agent having a functionality which is reactive with the calcined surface of the thermal filler particles, and a functionality having preferential wetting of the thermal filler particles over self-condensation. Additional additives such as fumed silica and polyisobutylene enhance the phase stability and resistance to thermo-mechanical shear force degradation of the thermally conductive compound encountered during functional usage, e.g., fluctuating power cycles.

Process for making a compliant thermally conductive compound

Low dielectric composite substrate

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

A compliant thermally conductive, preferably dielectric, compound that enhances the power dissipation capability of high-powered electrical components such as bipolar VLSI semiconductor chips. The compound has chemically stable thermal conduction and viscosity properties; is not subject to phase separation during use and may be applied in small gaps to maximize thermal conduction. The compound preferably comprises a liquid carrier having thermal filler particles dispersed therein and a coupling agent having a functionality which is reactive with the calcined surface of the thermal filler particles, and a functionality having preferential wetting of the thermal filler particles over self-condensation. Additional additives such as fumed silica and polyisobutylene enhance the phase stability and resistance to thermo-mechanical shear force degradation of the thermally conductive compound encountered during functional usage, e.g., fluctuating power cycles.

Compliant thermally conductive compound

An electronic component is formed by in situ curing a polymerizable oligomer which is end capped with vinyl and/or acetylenic end groups. The polymerizable oligomer is selected from the group consisting of polyamic acids, polyamic esters, polyisoimides, and mixtures thereof.

Electronic components comprising polymide dielectric layers

Electronic components are disclosed comprising an insulator which is the in situ cured reaction product of a polymerizable oligomer which is end capped with a vinyl and/or acetylenic end groups.

Electronic components comprising polyimide-filled isolation structures

Electronic components are disclosed comprising an insulator which is the in situ cured reaction product of a polymerizable oligomer which is end capped with vinyl or acetylenic end groups. The polymerizable oligomer comprises polyamic acids, the corresponding polyamic esters, the corresponding polyisoimides and mixtures thereof. A process for forming the electronic components comprising the insulator is also disclosed.

Method for forming electrical components comprising cured vinyl and/or

Disclosed is a process for planarization of semiconductor structures having dielectric isolation regions. Specifically, the process is directed to planarization of an organic polyimide layer obtained following filling of deep trenches in a semiconductor substrate having high and low density trench regions with this material. After over-filling the trenches with the polyimide and obtaining a non-planar polyimide layer having a thickness much larger in the low trench density regions than that in the high density regions, a photoresist layer is applied thereover. The photoresist is then controllably exposed using a mask which is the complement or inverse of the mask used for imaging the trench patterns to obtain a thick blockout photoresist mask over the trenches and a thin wetting layer of photoresist over the remainder of the substrate. Next, by means of a thermal step, the blockout photoresist is caused to reflow to form a relatively thick photoresist layer over the high trench density regions and a thin photoresist layer over the low trench density regions, thereby exactly compensating for the non-planarity of the polyimide layer.

Planarization process for organic filling of deep trenches

A method of producing electronic components is disclosed wherein an insulator is in situ cured. The insulator is comprised of a polymerizable oligomer end capped with vinyl and/or acetylenic end groups which both imidize and cross-link upon cure to provide a three-dimensional dielectric network.

Method of producing electronic components utilizing cured vinyl and/or

Thin dielectric films are formed on an electronic component by in situ curing a polymerizable oligomer which is end capped with vinyl and/or acetylenic end groups. The polymerizable oligomers are comprised of polyamic acids, polyamic esters, polyisoimides, and mixtures thereof which can be crosslinked to form a three-dimensional network via sites at the vinyl or acetylenic end groups and sites at carbonyl groups contained within the polymeric chain. Use of these polymerizable oligomers permits utilization of low temperature methods of curing which reduce intrinsic and extrinsic stress within the cured dielectric film.

Method for forming a film of dielectric material on an electric component

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Poughkeepsie, NY, United States of America

Mark A Takacs