Hoechst Celanese Corporation

Rca Inc.

Clariant Finance (bvi) Limited

Clariant International Ltd

Mark A Spak

Dana L Durham

Sangya Jain

Donald C Mammato

Ralph R Dammel

Dinesh N Khanna

Tai-Shung Chung

Michael J McFarland

Henry Kressel

Jianhui Shan

Douglas A Usifer

Shuji Ding

Randy D Redd

Richard Denning

Brenda A Bembry-Ross

John P Sagan

C Glen Wensley

Stephen Meyer

Eleazer Gonzalez

Michael Deprado

Barry Polhemus

E Ronald Kafchinski

The present invention relates to a light-sensitive photoresist composition especially useful for imaging thick films, comprising a film-forming alkali-soluble resin, a photoactive compound, and a surfactant at a level ranging from about 2000 ppm to about 14,000 ppm by weight of total photoresist. Preferably the photoresist film has a thickness greater than 20 microns. The invention further provides for a process for coating and imaging the light-sensitive composition of this invention.

Photoresist composition for imaging thick films

The present invention relates to a process for providing a pattern on a substrate for use in a metal lift-off process, the process comprising: 1) coating a substrate with a liquid positive photoresist; 2) soft baking the coated substrate; 3) contacting the substrate with an aqueous alkaline developer containing from about 0.005 volume percent to about 0.05 volume percent of an alkylene glycol alkyl ether; 4) placing a patterned mask over the substrate; 5) exposing the substrate through the mask; 6) post exposure baking the substrate; 7) optionally, flood exposing the substrate; and 8) developing the substrate with an aqueous alkaline developer. The invention also relates to a novel developer solution of an ammonium hydroxide containing from about 0.005 volume percent to about 0.5 volume percent of an alkylene glycol alkyl ether and to a process for producing such a novel developer solution.

Lift-off process for patterning fine metal lines

The present invention relates to a novel antireflective coating solution and a process for its use in photolithography. The antireflective coating solution comprises a novel polymer and an organic solvent or mixture of solvents, where the novel polymer comprises a unit containing a dye that absorbs from about 180 nm to about 450 nm and does not contain a crosslinking group.

Antireflective coating for photoresist compositions

A process for obtaining a lift-off imaging profile which comprises the steps of:

Process for obtaining a lift-off imaging profile

A process for converting a normally positive working photosensitive composition to a negative working composition. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image.

Image reversal negative working photoresist containing O-quinone diazide

A composite fiber or film for use in a fluid separation membrane made of PAN coated with an intermediate permeable material and further coated with a selective layer. The PAN fiber or film is pre-wet with perfluoroether prior to being coated with the intermediate material, to produce a membrane material having enhanced permeability. The selective layer produces a high separation factor.

High performance pan composite membranes

A process for converting a normally positive working photosensitive composition to a negative working composition is disclosed. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image. The image-reversal negative-working photoresists of this invention have superior storage stability and shelf life.

Image reversal negative working O-naphthoquinone diazide and

Image reversal negative working o-quinone diazide and cross-linking

A method for producing a negative image by coating a substrate with a photosensitive layer containing a blocked hydrophobic polymer capable of deblocking in the presence of an acid, and an oxime sulfonate ester or o-quinone-4-sulfonyl-containing diazide, then imagewise exposing, treating with a gaseous base, removing excess base, overall flood exposing, baking and developing with an aqueous alkaline solution.

Method of producing an image reversal negative photoresist having a

Image reversal negative working O-quinone diazide and cross-linking

Image reversal negative working O-napthoquinone diazide and

The invention provides a method for producing a photographic element which comprises coating a substrate with a positive working photosensitive composition which composition comprises an aqueous alkali soluble resin, a quinone diazide photosensitizer and a solvent composition, heat treating said coated substrate at a temperature of from about 20.degree. C. to about 100.degree. C. until substantially all of said solvent composition is removed; imagewise exposing said photosensitive composition to actinic radiation; baking said coated substrate at a temperature of from about 120.degree. C. to about 160.degree. C. for from about 15 seconds to about 90 seconds; and removing the exposed non-image areas of said composition with a suitable developer.

High temperature post exposure baking treatment for positive photoresist

A method of applying thin metal sensitizing deposits to the exposed silicon areas of a silicon substrate having areas of exposed silicon and silicon oxide, including the steps of immersing the silicon substrate in a basic, aqueous solution containing a metal salt of the metal to be deposited, particularly a nickel, cobalt, or platinum salt, and thereafter reducing the metal ion of the salt to the elemental metal by use of the exposed silicon as the reducing agent.

Method of applying thin metal deposits to a substrate

An etchant solution for multilayered metal layers comprising an aqueous solution of from 0.5 to 50 percent by weight of nitric acid, from 0.03 to 1.0 percent by weight of hydrofluoric acid, from 0.05 to 0.5 percent by weight of hydrogen peroxide and from 0.1 to 1.0 percent by weight of sulphuric acid. The solution is compatible with photolithographic techniques and uniformly etches three or more metals.

Etchant solution containing HF-HnO.sub.3 -H.sub.2 SO.sub.4 -H.sub.2 O.sub.2

A p-n junction silicon semiconductor device passivated with a first layer of oxygen-doped polycrystalline silicon and a second layer of silicon nitride, is treated to provide contact openings through to the silicon substrate by first depositing an undoped polycrystalline silicon layer over the silicon nitride layer, coating with photoresist, exposing and developing the photoresist to provide an opening to the polycrystalline silicon layer, etching through said latter layer with a particular etchant solution that etches large diameter openings at a faster rate than small diameter openings, and etching through the passivating layers whereby the desired contact opening is etched through to the substrate but pinhole openings less than about 2 microns in diameter in the photoresist layer are not propagated through the passivating layers.

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Edison, NJ, United States of America

Mark A Spak