Atmel Corporation

Mark A Good

Amit S Kelkar

Gayle W Miller

Thomas S Moss

Methods and materials for silicon on insulator wafer production in which the doping concentration in a handle wafer is sufficiently high to inhibit dopant from diffusing from the bond wafer during or after bonding to the handle wafer.

Method and materials to control doping profile in integrated circuit substrate material

A method for fabricating a silicon dioxide/silicon nitride/silicon dioxide (ONO) stacked composite having a thin silicon nitride layer for providing a high capacitance interpoly dielectric structure. In the formation of the ONO composite, a bottom silicon dioxide layer is formed on a substrate such as polysilicon. A silicon nitride layer is formed on the silicon dioxide layer and is thinned by oxidation. The oxidation of the silicon nitride film consumes some of the silicon nitride by a reaction that produces a silicon dioxide layer. This silicon dioxide layer is removed with a hydrofluoric acid dilution. The silicon nitride layer is again thinned by re-oxidization as a top silicon dioxide layer is formed on the silicon nitride layer. A second layer of polysilicon is deposited over the silicon nitride, forming an interpoly dielectric.

Method for fabrication of a high capacitance interpoly dielectric

A method for fabricating a silicon dioxide/silicon nitride/silicon dioxide (ONO) stacked composite having a thin silicon nitride layer for providing a high capacitance interpoly dielectric structure. In the formation of the ONO composite, a bottom silicon dioxide layer is formed on a substrate such as polysilicon. A silicon nitride layer is formed on the silicon dioxide-layer and is thinned by oxidation. The oxidation of the silicon nitride film consumes some of the silicon nitride by a reaction that produces a temporary silicon dioxide layer. The temporary silicon dioxide layer is removed with a hydrofluoric acid dilution. The silicon nitride layer is again thinned by re-oxidization as a top silicon dioxide layer is formed on the silicon nitride layer. A layer of polysilicon is deposited over the silicon nitride, forming an interpoly dielectric.

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Colorado Springs, CO, United States of America

Mark A Good