Nlight Photonics Corporation

Luxnet Corporation

Mark A Devito

Jason N Farmer

Mark R Pratt

Chin-Wang Tu

Zhe Huang

Paul A Crump

Mike P Grimshaw

Hsing Kung

Embodiments of the present invention are directed to method of fabrication of a broadband emitter array. Embodiments of the present invention may grown a first set of emitters possessing a first quantum well characteristic (e.g., quantum well thickness or composition). A portion of the first set of emitters is removed by etching. In place of the removed emitters, a second set of emitters is regrown with said second set of emitters possessing a different quantum well characteristic. By fabricating the emitters sets in this manner, a unitary emitter array may be fabricated that possesses an increased bandwidth, e.g., the first and second sets of emitters may be associated with different center wavelengths. Embodiments of the present invention may utilize emitter arrays fabricated in this manner in, for example, incoherently beam combined (IBC) lasers and in Raman amplifier systems.

Broad spectrum emitter array and methods for fabrication thereof

Structures for light emitting diodes are disclosed, which include improved current blocking and light extraction structures. The diodes typically include a substrate formed on a first electrode, a first confining layer of a first conductivity type formed on the substrate, an active region formed on the first confining layer, a second confining layer of a second conductivity type formed on the active region, and a window layer of the second conductivity type formed on the second confining layer. A contact layer of the second conductivity type is formed on the window layer for making ohmic contact, a conductive oxide layer is formed on the contact layer, and a second electrode is formed on the conductive oxide layer. The conductive oxide layer typically includes a central portion located below the second top electrode, which extends into the LED structure, typically beyond the contact layer and into the window layer, or even beyond the window layer, such as into the second confining layer. The improved LED structures preferably include a higher resistive or reverse biased pattern, typically built on or within the substrate, approximately below the second electrode, to further assist the current blocking function. The light emitting diodes preferably include one or more holes which are defined in the conductive oxide layer, or within both the conductive oxide layer and the contact layer, to promote the transmission of light from the upper surface of the light emitting diode. A Distributed Bragg Reflector is also preferably provided between the lower substrate and the first confining layer, to reduce light absorption within the substrate, and to promote efficient light extraction from the top of the LED structure.

Light emitting diode of improved current blocking and light extraction structure

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Vancouver, WA, United States of America

Mark A Devito