Nxp B.v.

Koninklijke Philips Corporation N.v.

Ipdia

Marion Kornelia Matters-Kammerer

Theodoor Gertrudis Silvester Maria Rijks

Jozef Thomas Martinus Van Beek

Klaus Reimann

Rainer Kiewitt

Jaime Gomez Rivas

Jozef T M Van Beek

Marco Matters

Lorenzo Tripodi

Vincenzo Giannini

Theodoor G S M Rijks

Audrey Anne-Marie Berrier

Henricus Andreas Van Esch

Stefan Alexander Maier

Henricus A Van Esch

A THz frequency range antenna is provided which comprises: a semiconductor film () having a surface adapted to exhibit surface plasmons in the THz frequency range. The surface of the semiconductor film () is structured with an antenna structure () arranged to support localized surface plasmon resonances in the THz frequency range.

THz frequency range antenna

A capacitor device, an electronic circuit comprising a capacitor device, an electronic component, and a method of forming a capacitor device are described. In the capacitor device, a current-path region extends from one of two trench capacitor electrodes to a respective contact structure. The current-path region is obtainable by thinning the substrate from an original substrate thickness down to reduced substrate thickness either in a lateral substrate portion containing the capacitor region or over the complete lateral extension of the substrate before forming the first and second contact structures. The capacitor device exhibits a reduced impedance in the current-path region. This reduced impedance implies a low self-inductance and self-resistance that is caused by the current-path region. The low self-inductance provides an improved signal suppression over a broadened spectral range in a circuit configuration that employs the capacitor device as a bypass capacitor between a signal line and ground potential.

Trench capacitor device suitable for decoupling applications in high-frequency operation

The invention relates to a high frequency component with a substrate constructed of a plurality of dielectric layers and, between them, electrode layers having conducting track structures, in which substrate at least one capacitive element and at least one inductive element is formed, whereby at least one arrangement of opposed conducting trackstructures is provided, these realizing simultaneously a capacitive and an inductive element, whereby the common-mode impedance and the push-pull impedance between the opposing conducting track structures are adjusted to differ by a factor of at least 2.

High frequency component

A metallization structure in a multilayer stack, which is arranged at a distance from a ground electrode, is characterized in that the metallization structure has a capacitor electrode and a line that acts as a coil, where the capacitor electrode and the line are arranged in a common plane which lies parallel with the ground electrode at a distance h, and in that formula (I) where w is the width of the line.

Multilayer stack with compensated resonant circuit

A decoupling module for decoupling high-frequency signals from a voltage supply line, the module including a plurality of parallel-connected capacitors (K, K, . . . ), which each have a capacitance (C, C, . . . ), and are characterized in that at least one of the capacitors (K) has an inductance (L) which is selected dependent on the capacitance (C) of the capacitor (K) and the voltage supply line inductance (L), so that a resonance is generated which compensates the self-resonance of the system from at least a further capacitor (K, . . . ) and the entire voltage supply line (S). Lis the inductance of the voltage supply line running between the parallel-connected capacitors.

Decoupling module for decoupling high-frequency signals from a voltage supply line

A coupler () having a first line () and a second line () also comprises a resonant structure () including a capacitor () and an inductor (). The coupler () thus delivers a coupling signal Sthat is substantially frequency independent over a frequency domain above the resonance frequency of the resonant structure (). Also, the signal Shas a high degree of directivity. The coupler () can be provided as part of an integrated electronic component, such as a multilayer substrate, a thin-film module or an IC. It can be applied in an electronic device () between a power amplifier () and an antenna (). The coupling signal Swill thus be provided to a controlling circuit ().

Coupler, integrated electronic component and electronic device

The electronic device () comprises a capacitor () and an inductor () and is present on a substrate () with an unplanarized surface (). This is realized in winding () of the inductor () has a thickness of at least 1 micron and has a planarized upper surface (). The upper electrode () of the capacitor is present in a second electrode layer () and has a lower surface () which is spaced from the substrate () by a larger distance than the upper surface () of the lower electrode (). The second electrode layer () preferably includes a second winding () of the inductor (). The electronic device () is suitable for use at high frequencies.

Method and device for forming a winding on a non-planar substrate

A decoupling module for decoupling high-frequency signals from A power supply line, the module including a layer () of dielectric material which is arranged between a first and a second metallic layer (), where the first metallic layer () is connected as a ground electrode of the decoupling module and the second metallic layer () includes at least two surfaces of different size which are consecutively electrically connected between an input connection point and an output connection point, while two respective consecutive surfaces are connected to each other by only one conducting section.

Growing community of inventors

Limbricht, Netherlands

Marion Kornelia Matters-Kammerer