Infineon Technologies Austria Ag

Mario Stanovnik

Ravi Keshav Joshi

Juergen Steinbrenner

Andreas Behrendt

Johann Schmid

Richard Gaisberger

Johanna Schlaminger

Anita Satz

Described herein is a method and a power semiconductor device produced by the method. The method includes: forming a structured metallization layer above a semiconductor substrate; forming a protective layer on the structured metallization layer; forming a first passivation over the structured metallization layer with the protective layer interposed between the first passivation and the structured metallization layer; structuring the first passivation to expose one or more regions of the protective layer; removing the one or more exposed regions of the protective layer to expose one or more parts of the structured metallization layer; and after structuring the first passivation and removing the one or more exposed regions of the protective layer, forming a second passivation on the first passivation and electroless plating the one or more exposed parts of the structured metallization layer.

Passivation structuring and plating for semiconductor devices

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Villach, Austria

Mario Stanovnik