Carl Zeiss Jena Gmbh

Semikron Elektronik Gmbh

Jenoptik Gmbh

Mario Netzel

Matthias Chour

Reinhard Herzer

An IGBT includes two trenches extending from an emitter terminal toward a first side of a substrate of a first conductivity material. A collector layer of a second conductivity material is disposed on a second side of the substrate. The trenches each have a gate and a insulator within them. On the outside of the trenches, bulk regions of a second conductivity type are disposed on the first side of the substrate. On top of the bulk regions are bulk connection regions of a second conductivity type and source regions of a first conductivity type. The emitter couples the bulk and source regions. A material of either conductivity type, an insulator, or two MOSFETS are placed between the trenches. With multiple IGBTs, the trenches can be arranged in striped, island-like, or lattice format.

IGBT with trench gate structure

Stationary wave interpolator

Symmetrical carrier frequency interferometer for length, distance and speed measurements with beam-deflecting and beam-splitting elements, as well as a fixed reference mirror and a movable measurement mirror. The optically active surfaces positioned downstream of a first polarization-splitting layer are arranged in mirror-symmetrical manner with respect to the latter. Upstream of a second polarization-splitting layer inclined by 45.degree. a .lambda./2 plate is located in one of the two beam paths and in the passage direction behind said layer are located the .lambda./4 plate, the fixed reference mirror and the movable measurement mirror. There is at least one reversing element in the reflection direction.

Growing community of inventors

Braunsbedra, Germany

Mario Netzel